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Researcher profile

Lin-Xiu Ye

Lin-Xiu Ye contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement

We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the other microscopy methods. Moreover, the additional signal from anomalous Hall voltage makes this technique simpler and sensitive for DW velocity measurements, which can be useful for various spintronic sensing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sense current dependent coercivity and magnetization relaxation in Gd-Fe-Co Hall bar

The understanding of the characteristics of a magnetic layer in a different environment is crucial for any spintronics application. Before practical applications, thorough scrutiny of such devices is compulsory. Here we study such a potential Hall device of MgO-capped Hf/GdFeCo bilayer (FeCo-rich) for magnetization relaxation around nucleation fields at different voltage probe line widths and dc sensing currents. The device is characterized by anomalous Hall measurements in transverse and longitudinal Hall geometries for two different probe widths A (5 micrometer) and B (1 micrometer). The coercivities of the Hall loops (\r{ho}xy-H and Rxx-H) drop with increasing the sense current for both the probes. For probe B, the sharp and large drop in coercivity (\r{ho}xy-H loops) at comparatively lower sensing currents is observed, which is attributed to the negligible current shunting and presence of pinning site at B caused by the patterning process. The average domain wall velocities at various sensing currents for probe B are found to be smaller than probe A, from the transverse and longitudinal Hall geometry magnetization relaxation measurements, which agrees with pinning sites and Joule heating effect at probe B. The notch position in the pattern and the longitudinal Hall resistance curve peak shape suggest the domain wall propagation direction from probe B to probe A in the current channel. This study highlights the domain wall propagation at different nucleation fields, sensing currents, and the Hall probe aspect ratios.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Unusual Field Dependence of Anomalous Hall Effect in Ta/TbFeCo

Experimental studies of anomalous Hall effect are performed for thin filmed Ta/TbFeCo in a wide range of temperatures and magnetic fields up to 3 T. While far from the compensation temperature (TM=277 K) the field dependence has a conventional shape of a single hysteresis loop, just below the compensation point the dependence is anomalous having the shape of a triple hysteresis. To understand this behavior, we experimentally reveal the magnetic phase diagram and theoretically analyze it in terms of spin-reorientation phase transitions. We show that one should expect anomalous hysteresis loops below the compensation point if in the vicinity of it the magnetic anisotropy is dominated by FeCo sublattice due to interaction with Ta.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and nonmagnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in literature.

0 citations0 reviewsNo code linkedOpen access