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Leonardo Viti

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Published work

4 published item(s)

preprint2022arXiv

Lattice dynamics and elastic properties of black phosphorus

We experimentally determine the lattice dynamics of black phosphorus layered crystals through a combination of x-ray diffuse scattering and inelastic x-ray scattering, and we rationalize our experimental findings using $\textit{ab initio}$ calculations. From the phonon dispersions at terahertz frequencies, we derive the full single-crystal elastic tensor and relate it to the macroscopic elastic response of black phosphorus, described by the elastic moduli. The elastic stiffness coefficients obtained here provide an important benchmark for models of black phosphorus and related materials, such as phosphorene and black phosphorus nanotubes, recently emerged quantum materials, disclosing a huge potential for nanophotonics, optoelectronics, and quantum sensing.

preprint2022arXiv

Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies

The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano-electronic and nano-photonic devices and components by design, offering a unique platform for developing new devices with a variety of ad-hoc properties. In this perspective article, we provide a vision on the key transformative applications of 2D nanomaterials for the developments of nanoelectronic, nanophotonic, optical and plasmonic devices, at terahertz frequencies, highlighting how the rich physical phenomena enabled by their unique band-structure engineering can allow those devices to boost the vibrant field of quantum science and quantum technologies.

preprint2020arXiv

HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise

Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date.

preprint2020arXiv

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications.