Researcher profile

Leo Sementilli

Leo Sementilli contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Nanomechanical Dissipation and Strain Engineering

Nanomechanical resonators have applications in a wide variety of technologies ranging from biochemical sensors to mobile communications, quantum computing, inertial sensing, and precision navigation. The quality factor of the mechanical resonance is critical for many applications. Until recently, mechanical quality factors rarely exceeded a million. In the past few years however, new methods have been developed to exceed this boundary. These methods involve careful engineering of the structure of the nanomechanical resonator, including the use of acoustic bandgaps and nested structures to suppress dissipation into the substrate, and the use of dissipation dilution and strain engineering to increase the mechanical frequency and suppress intrinsic dissipation. Together, they have allowed quality factors to reach values near a billion at room temperature, resulting in exceptionally low dissipation. This review aims to provide a pedagogical introduction to these new methods, primarily targeted to readers who are new to the field, together with an overview of the existing state-of-the-art, what may be possible in the future, and a perspective on the future applications of these extreme-high quality resonators.

preprint2020arXiv

Engineering the dissipation of crystalline micromechanical resonators

High quality micro- and nano-mechanical resonators are widely used in sensing, communications and timing, and have future applications in quantum technologies and fundamental studies of quantum physics. Crystalline thin-films are particularly attractive for such resonators due to their prospects for high quality, intrinsic stress and yield strength, and low dissipation. However, when grown on a silicon substrate, interfacial defects arising from lattice mismatch with the substrate have been postulated to introduce additional dissipation. Here, we develop a new backside etching process for single crystal silicon carbide microresonators that allows us to quantitatively verify this prediction. By engineering the geometry of the resonators and removing the defective interfacial layer, we achieve quality factors exceeding a million in silicon carbide trampoline resonators at room temperature, a factor of five higher than without the removal of the interfacial defect layer. We predict that similar devices fabricated from ultrahigh purity silicon carbide and leveraging its high yield strength, could enable room temperature quality factors as high as $6\times10^9$