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Lambert Alff

Lambert Alff contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2021arXiv

Oxygen Defect Engineered Magnetism of La2NiMnO6 Thin Films

The double perovskite La2NiMnO6 (LNMO) exhibits complex magnetism due to the competition of magnetic interactions that are strongly affected by structural and magnetic inhomogeneities. In this work, we study the effect of oxygen annealing on the structure and magnetism of epitaxial thin films grown by pulsed laser deposition. The key observations are that a longer annealing time leads to a reduction of saturation magnetization and an enhancement in the ferromagnetic transition temperature. We explain these results based upon epitaxial strain and oxygen defect engineering. The oxygen enrichment by annealing caused a decrease in the volume of the perovskite lattice. This increased the epitaxial strain of the films that are in-plane locked to the SrTiO3 substrate. The enhanced strain caused a reduction in the saturation magnetization due to randomly distributed anti-site defects. The reduced oxygen defects concentration in the films due to the annealing in oxygen improved the ferromagnetic long-range interaction and caused an increase in the magnetic transition temperature.

preprint2012arXiv

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO$_{2\pm x}$

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO$_{2\pm x}$ grown by reactive molecular beam epitaxy (MBE). The oxidation conditions induce a switching between ($\bar{1}11$) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and $p$-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

preprint2011arXiv

Controlled oxygen vacancy induced p-type conductivity in HfO{2-x} thin films

We have synthesized highly oxygen deficient HfO$_{2-x}$ thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10^{21} charge carriers per cm3. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.