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L. Cheng

L. Cheng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conastro-ph.SRhep-phInformation Theorymath.ITphysics.comp-ph

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Published work

20 published item(s)

preprint2021arXiv

Extremely low-energy collective modes in a quasi-one-dimensional system

We have investigated the quasiparticle dynamics and collective excitations in the quasi-one-dimensional material ZrTe$_5$ using ultrafast optical pump-probe spectroscopy. Our time-domain results reveal two coherent oscillations having extremely low energies of $\hbarω_1\sim$0.33 meV (0.08 THz) and $\hbarω_2\sim$1.9 meV (0.45 THz), which are softened as the temperature approaches two different critical temperatures ($\sim$54 K and $\sim$135 K). We attribute these two collective excitations to the amplitude mode of charge density wave instabilities in ZrTe$_5$ with tremendously small nesting wave vectors. Furthermore, scattering with the $\hbarω_2$ mode may result in a peculiar quasiparticle decay process with a timescale of $\sim$1-2 ps below the transition temperature $T^*$ ($\sim$135 K). Our findings provide pivotal information for studying the fluctuating order parameters and their associated quasiparticle dynamics in various low-dimensional topological systems and other materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effects of topological edge states on the thermoelectric properties of Bi nanoribbons

Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger electrical conductivity. As a consequence, a room temperature value exceeding 3.0 could be achieved for both p- and n-type systems when the relaxation time ratio between the edge and the bulk states is tuned to be 1000. Our theoretical study suggests that the utilization of topological edge states might be a promising approach to cross the threshold of the industrial application of thermoelectricity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High thermoelectric performance of distorted Bismuth (110) layer

The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT value of 6.4 can be achieved for n-type system, which is essentially stemmed from the weak scattering of electrons. Moreover, we demonstrate that the distorted Bi layer remains high ZT values at relatively broad regions of both temperature and carrier concentration. Our theoretical work emphasizes that the deformation potential constant characterizing the electron-phonon scattering strength is an important paradigm for searching high thermoelectric performance materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Predicting the optimized thermoelectric performance of MgAgSb

Using first-principles method and Boltzmann theory, we provide an accurate prediction of the electronic band structure and thermoelectric transport properties of alpha-MgAgSb. Our calculations demonstrate that only when an appropriate exchange-correlation functional is chosen can we correctly reproduce the semiconducting nature of this compound. By fine tuning the carrier concentration, the thermoelectric performance of alpha-MgAgSb can be significantly optimized, which exhibits a strong temperature dependence and gives a maximum ZT value of 1.7 at 550 K.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermal conductivities of phosphorene allotropes from first-principle calculations: a comparative study

Phosphorene has attracted tremendous interest recently due to its intriguing electronic properties. However, the thermal transport properties of phosphorene, especially for its allotropes, are still not well-understood. In this work, we calculate the thermal conductivities of five phosphorene allotropes (α-, \b{eta}-, γ-, δ- and ζ-phase) by using phonon Boltzmann transport theory combined with first-principles calculations. It is found that the α-phosphorene exhibits considerable anisotropic thermal transport, while it is less obvious in the other four phosphorene allotropes. The highest thermal conductivity is found in the \b{eta}-phosphorene, followed by δ-, γ- and ζ-phase. The much lower thermal conductivity of the ζ-phase can be attributed to its relatively complex atomic configuration. It is expected that the rich thermal transport properties of phosphorene allotropes can have potential applications in the thermoelectrics and thermal management.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermoelectric properties of graphyne from first-principles calculations

The two-dimensional graphene-like carbon allotrope, graphyne, has been recently fabricated and exhibits many interesting electronic properties. In this work, we investigate the thermoelectric properties of γ-graphyne by performing first-principles calculations combined with Boltzmann transport theory for both electron and phonon. The carrier relaxation time is accurately evaluated from the ultra-dense electron-phonon coupling matrix elements calculated by adopting the density functional perturbation theory and Wannier interpolation, rather than the generally used deformation potential theory which only considers the electron-acoustic phonon scattering. It is found that the thermoelectric performance of γ-graphyne exhibits a strong dependence on the temperature and carrier type. At an intermediate temperature of 600 K, a maximum ZT value of 1.5 and 1.0 can be achieved for the p- and n-type systems, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced thermoelectric performance of carbon nanotubes at elevated temperature

The electronic and transport properties of (10, 0) single-walled carbon nanotube are studied by performing the first-principles calculations and semi-classical Boltzmann theory. It is found that the (10, 0) tube exhibits considerably large Seebeck coefficient and electrical conductivity which is highly desirable for good thermoelectric materials. Together with the lattice thermal conductivity predicted by non-equilibrium molecular dynamics simulations, the room temperature ZT value of (10, 0) tube is estimated to be 0.15 for p-type carriers. Moreover, the ZT value exhibits strong temperature dependence and can be reached to 0.77 at 1000 K. Such ZT value can be further enhanced to as high as 1.7 by isotope substitution and chemisorptions of hydrogen on the tube.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphdiyne: a two-dimensional thermoelectric material with high figure of merit

As a new carbon allotrope, the recently fabricated graphdiyne has attracted much attention due to its interesting two-dimensional character. Here we demonstrate by multiscale computations that, unlike graphene, graphdiyne has a natural band gap, and simultaneously possess high electrical conductivity, large Seebeck coefficient, and low thermal conductivity. At a carrier concentration of 2.74*10^11/cm^2 for holes and 1.62*10^11/cm^2 for electrons, the room temperature ZT value of graphdiyne can be optimized to 3.0 and 4.8, respectively, which makes it an ideal system to realize the concept of "phonon-glass and electron-crystal" in the thermoelectric community.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High thermoelectric performance can be achieved in black phosphorus

Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by substituting P atom with Sb atom, giving nominal formula of P0.75Sb0.25. Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structure or seeking for low-dimensional systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

The electronic and transport properties of CuInTe2 chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with experimental data and leads to relatively larger Seebeck coefficient compared with those of narrow-gap thermoelectric materials. By fine tuning the carrier concentration, the electrical conductivity and power factor of the system can be significantly optimized. Together with the inherent low thermal conductivity, the ZT values of CuInTe2 compound can be enhanced to as high as 1.72 at 850 K, which is obviously larger than those measured experimentally and suggests there is still room to improve the thermoelectric performance of this chalcopyrite compound.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Correlated Source Coded Sequences with Compromised Channel and Source Symbols using Shannon's Cipher System

Correlated sources are present in communication systems where protocols ensure that there is some predetermined information for sources to transmit. Here, two correlated sources across a channel with eavesdroppers are investigated, and conditions for perfect secrecy when some channel information and some source data symbols (the predetermined information) have been wiretapped are determined. The adversary in this situation has access to more information than if a link is wiretapped only and can thus determine more about a particular source. This scenario caters for an application where the eavesdropper has access to some preexisting information. We provide bounds for the channel and key rates for this scenario. Further, we provide a method to reduce the key lengths required for perfect secrecy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effects of van der Waals interactions and quasiparticle corrections on the electronic and transport properties of Bi2Te3

We present a theoretical study of the structural, electronic and transport properties of bulk Bi2Te3 within density functional theory taking into account the van der Waals interactions (vdW) and the quasiparticle self-energy corrections. It is found that the optB86b-vdW functional can well reproduce the experimental lattice constants and interlayer distances for Bi2Te3. Based on the fully optimized structure, the band structure of Bi2Te3 is obtained from first-principles calculations with the GW approximation and the Wannier function interpolation method. The global band extrema are found to be off the high-symmetry lines, and the real energy band calculated is in good agreement with that measured experimentally. In combination with the Boltzmann theory, the GW calculations also give accurate prediction of the transport properties, and the calculated thermoelectric coefficients of Bi2Te3 almost coincide with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

MoS2 nanoribbons as promising thermoelectric materials

The thermoelectric properties of MoS2 armchair nanoribbons with different width are studied by using first-principles calculations and Boltzmann transport theory, where the relaxation time is predicted from deformation potential theory. Due to the dangling bonds at the armchair edge, there is obvious structure reconstruction of the nanoribbons which plays an important role in governing the electronic and transport properties. The investigated armchair nanoribbons are found to be semiconducting with indirect gaps, which exhibit interesting width-dependent oscillation behavior. The smaller gap of nanoribbon with width N = 4 leads to a much larger electrical conductivity at 300 K, which outweighs the relatively larger electronic thermal conductivity when compared with those of N = 5, 6. As a results, the room temperature ZT values can be optimized to 2.7 (p-type) and 2.0 (n-type), which significantly exceed the performance of most laboratory results reported in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phosphorene nanoribbon as a promising candidate for thermoelectric applications

In this work, the electronic properties of phosphorene nanoribbons with different width and edge configurations are studied by using density functional theory. It is found that the armchair phosphorene nanoribbons are semiconducting while the zigzag nanoribbons are metallic. The band gaps of armchair nanoribbons decrease monotonically with increasing ribbon width. By passivating the edge phosphorus atoms with hydrogen, the zigzag series also become semiconducting, while the armchair series exhibit a larger band gap than their pristine counterpart. The electronic transport properties of these phosphorene nanoribbons are then investigated using Boltzmann theory and relaxation time approximation. We find that all the semiconducting nanoribbons exhibit very large values of Seebeck coefficient and can be further enhanced by hydrogen passivation at the edge. Taking armchair nanoribbon with width N=7 as an example, we calculate the lattice thermal conductivity with the help of phonon Boltzmann transport equation. Due to significantly enhanced Seebeck coefficient and decreased thermal conductivity, the phosphorene nanoribbon exhibit a very high figure of merit (ZT value) of 4.0 at room temperature, which suggests its appealing thermoelectric applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Radiation fields by intermediate-age stellar populations with binaries as ionizing sources of H II regions

Radiation fields emitted by O, B-type stars or young stellar populations (SPs) are generally considered as significant central ionizing sources (CISs) of classic H II regions. In our previous studies, we show that the inclusion of binary interactions in stellar population synthesis models can significantly increase the ultraviolet spectrum hardness and the number of ionizing photons of intermediate-age (IA, 7<~log(t/yr)<~8) SPs. In this work, we present photoionization models of H II regions ionized by radiation fields emitted by IA SPs, and show that radiation fields of IA SPs, including binary systems, are in theory possible candidates of significant CISs of classic H II regions. When radiation fields of IA SPs comprising binary systems are used as the CISs of classic H II regions, the theoretical strengths of a number of lines (such as [O III]4959', [S II]6716', etc.), weaker than observations, are raised; the border /selection-criterion lines, between star-forming galaxies and AGNs in the diagnostic diagrams (for example, [N II]6583/Ha~[O III]5007/Hb), move into the region occupied originally by AGNs; and He II 1640 line, observed in Lyman break and high-redshift gravitationally lensed galaxies, also can be produced.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Theoretical study of the thermoelectric properties of SiGe nanotubes

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

YBCO-buffered NdBCO film with higher thermal stability in seeding REBCO Growth

In this work, we report a strengthened superheating effect caused by a buffering YBa2Cu3Oy (Y123 or YBCO) layer in the Nd1+xBa2-xCu3O7-y (Nd123 or NdBCO) thin film with MgO substrate (i.e., NdBCO/YBCO/MgO thin film). In the cold-seeding melt-textured (MT) growth, the NdBCO/YBCO/MgO film presented an even higher superheating level, about 20 °C higher than that of non-buffered NdBCO film (i.e., NdBCO/MgO film). Using this NdBCO/YBCO/MgO film as seeds and undergoing a maximum processing temperature (Tmax) up to 1120 °C, we succeeded in growing various RE1+xBa2-xCu3O7-y (REBCO, RE=rare elements) bulk superconductors, including Gd1+xBa2-xCu3O7-y (GdBCO), Sm1+xBa2-xCu3O7-y (SmBCO) and NdBCO that have high peritectic temperatures (Tp). The pole figure (X-Ray ϕ-scan) measurement reveals that the NdBCO/YBCO/MgO film has better in-plane alignment than the NdBCO/MgO film, indicating that the induced intermediate layer improves the crystallinity of the NdBCO film, which could be the main origin of the enhanced thermal stability. In short, possessing higher thermal stability and enduring a higher Tmax in the MT process, the NdBCO/YBCO/MgO film is beneficial to the growth of bulk superconductors in two aspects: (1) broad application for high-Tp REBCO materials; (2) effective suppression against heterogeneous nucleation, which is of great assistance in growing large and high-performance REBCO crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Multi-seeded melt growth (MSMG) of bulk Y-Ba-Cu-O using thin-film seeds

Y-Ba-Cu-O (YBCO) and Sm-Ba-Cu-O (SmBCO) thin films have been used for the first time as heterogeneous seeds to multi-seed successfully the melt growth of bulk YBCO in a multi-seeded melt growth (MSMG) process. The use of thin film seeds, which may be prepared with highly controlled orientation (i.e. with a well-defined a-b plane and precisely known a-direction), is based on their superheating properties and reduces significantly contamination of the bulk sample by the seed material. A variety of grain boundaries were obtained by varying the angle between the seeds. Microstructural studies indicate that the extent of residual melt deposited at the grain boundary decreases with increasing grain boundary contact angle. It is established that the growth front proceeds continuously at the (110)/(110) grain boundary without trapping liquid, which leads to the formation of a clean grain boundary.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

"Listening" to the spin noise of conduction electrons in bulk n:GaAs

We report a comprehensive study of stochastic electron spin fluctuations -- spin noise -- in lightly doped ($n$-type) bulk GaAs, which are measured using sensitive optical magnetometry based on off-resonant Faraday rotation. Frequency spectra of electron spin noise are studied as a function of electron density, magnetic field, temperature, probe laser wavelength and intensity, and interaction volume. Electron spin lifetimes $τ_s$ are inferred from the width of the spin noise spectra, and are compared with direct measurements of $τ_s$ using conventional Hanle effect methods. Both methods reveal a strong and similar dependence of $τ_s$ on the wavelength and intensity of the probe laser, highlighting the undesired influence of sub-bandgap absorption effects on the nominally `non-perturbative' spin noise measurements. As a function of temperature, the spin noise power increases approximately linearly from 1.5 K to 30 K, as expected for degenerate electrons obeying Fermi-Dirac statistics, but with an additional zero-temperature offset. Finally, as the cross-sectional area of the probe laser shrinks and fewer electrons are probed, the measured Faraday rotation fluctuations due to electron spin noise are shown to increase, as expected.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Viscous Effects on Elliptic Flow and Shock Waves

Fast thermalization and a strong buildup of elliptic flow of QCD matter as found at RHIC are understood as the consequence of perturbative QCD (pQCD) interactions within the 3+1 dimensional parton cascade BAMPS. The main contributions stem from pQCD bremsstrahlung $2 \leftrightarrow 3 $ processes. By comparing to Au+Au data of the flow parameter $v_2$ as a function of participation number the shear viscosity to entropy ratio is dynamically extracted, which lies in the range of 0.08 and 0.2, depending on the chosen coupling constant and freeze out condition. Furthermore, first simulations on the temporal propagation of dissipative shock waves are given. The cascade can either simulate true ideal shocks as well as initially diluted, truely viscous shocks, depending on the employed cross sections or mean free path, respectively.

0 citations0 reviewsNo code linkedOpen access