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Researcher profile

Krzysztof Gawarecki

Krzysztof Gawarecki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2022arXiv

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

In this work we derive a ready-to-use symmetry invariant expansion of the full-zone 30-band k.p Hamiltonian for the Td point group. In order to find respective parameters, the band structures of III-V materials were calculated within a state-of-the-art Density Functional Theory (DFT) approach and used next as targets to adjust the k.p bands. A satisfactory agreement of the k.p model with the DFT band structures, for all the tested zinc blende III-V semiconductors, has been achieved. Values of many of the parameters have not been known so far. We also compare the fitted k.p parameters with the values calculated using momentum matrix elements obtained directly from the DFT.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Structural symmetry-breaking to explain radiative Auger transitions in self-assembled quantum dots

The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines for a range of InGaAs/GaAs self-assembled quantum dots and use a tight-binding model with a configuration interaction approach to explain their appearance. Introducing a composition fluctuation cluster in the dot, our calculations show excellent agreement with measurements. We relate our findings to group theory explaining the origin of the additional emission lines. Our model and results give insight into the interplay between the symmetry breaking in a quantum dot and the position and strength of the radiative Auger lines.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Phonon-assisted relaxation between triplet and singlet states in a self-assembled double quantum dot

We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We characterize the relative importance of various relaxation channels as a function of the electric and magnetic fields. The simulations are based on a model combining the eight-band k.p method and configuration-interaction approach. We show that the electron g-factor mismatch between the Zeeman doublets localized on different dots opens a relatively fast triplet-singlet relaxation channel. We also demonstrate, that the relaxation near the triplet-singlet anticrossing is slowed down up to several orders of magnitude due to vanishing of some relaxation channels.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron states in a double quantum dot with broken axial symmetry

We study theoretically the electron states in a system of two vertically stacked quantum dots. We investigate the influence of the geometrical symmetry breaking (caused by the displacement as well as the ellipticity of the dots) on the electron states. Our modeling is based on the 8-band kp method. We show that the absence of axial symmetry of the system leads to a coupling of the s state from one dot with the p and d states from the other. Our findings indicate, that this coupling can produce a strong energy splitting at resonance (on the order of several meV) in the case of closely spaced quantum dots. Furthermore, we show that in the presence of a piezoelectric field, the direction of the displacement plays an important role in the character of the coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon-assisted relaxation between hole states in quantum dot molecules

We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where lifetimes of hole states are very long which is related to vanishing tunnel coupling. We show also that the light hole admixture to hole states can considerably affect the hole relaxation rates even though its magnitude is very small.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electron states, phonon-assisted relaxation and tunneling in self-assembled quantum dot molecules in an electric field

We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in the system. We calculate phonon-assisted relaxation rates between the two lowest states (in one- and two-electron cases). The relaxation rates and energy levels are studied as a function of external (axial) electric field and geometry of the structure (dot sizes). We show that the relaxation times can be as low as 1~ps but efficent relaxation occurs only for very finely tuned dots.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Phonon-assisted relaxation and tunneling in self-assembled quantum dot molecules

We study theoretically phonon-assisted relaxation processes in a system consisting of one or two electrons confined in two vertically stacked self-assembled quantum dots. The calculation is based on a k.p approximation for single particle wave functions in a strained self-assembled structure. From these, two-particle states are calculated by including the Coulomb interaction and the transition rates between the lowest energy eigenstates are derived. We take into account phonon couplings via deformation potential and piezoelectric interaction and show that they both can play a dominant role in different parameter regimes. Within the Fermi golden rule approximation, we calculate the relaxation rates between the lowest energy eigenstates which lead to thermalization on a picosecond time scale in a narrow range of dot sizes.

0 citations0 reviewsNo code linkedOpen access