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Kristian Berland

Kristian Berland appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phphysics.comp-phcond-mat.softcond-mat.otherphysics.atm-clusquant-ph

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Published work

18 published item(s)

preprint2022arXiv

Improved proton-transfer barriers with van der Waals density functionals: Role of repulsive non-local correlation

Proton-transfer (PT) between organic complexes is a common and important biochemical process. Unfortunately, PT energy barriers are difficult to accurately predict using density functional theory (DFT); in particular, the generalized gradient approximation (GGA) tends to underestimate PT barriers. Moreover, PT typically occurs in environments where dispersion forces contribute to the cohesion of the system; thus, a suitable exchange-correlation functional should accurately describe both dispersion forces and PT barriers. This paper provides benchmark results for the PT barriers of several density functionals including several variants of the van der Waals density functional (vdWDF). The benchmark set comprises small organic molecules with inter- and intra-molecular PT. The results show that replacing GGA correlation with a fully non-local vdW-DF correlation increases the PT barriers, making it closer to the quantum chemical reference values. In contrast, including nonlocal correlations with the Vydrov-Voorhis (VV) method or dispersion-corrections at the DFT-D3 or the Tkatchenko-Scheffler (TS) level has barely any impact on the PT barriers. Hybrid functionals also increase and improve the energies and the best performance is provided by a hybrid version of the consistent-exchange van der Waals density functional vdW-DF-cx. For the formic acid dimer PT system, we analyzed the GGA exchange and non-local correlation contributions. The analysis shows that the repulsive part of the non-local correlation kernel plays a key role in the PT energy barriers predicted with vdW-DF.

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preprint2019arXiv

Shallow impurity band in ZrNiSn

ZrNiSn and related half Heusler compounds are candidate materials for efficient thermoelectric energy conversion with a reported thermoelectric figure-of-merit of n-type ZrNiSn exceeding unity. Progress on p-type materials has been more limited, which has been attributed to the presence of an impurity band, possibly related to the presence of Ni interstitials in nominally vacant 4d position. The specific energetic position of this band, however, has not been resolved. Here, we report results of a concerted theory-experiment investigation for a nominally undoped ZrNiSn, based on measurements of electrical resistivity, Hall coefficient, Seebeck coefficient and Nernst coefficient, measured in a temperature range from 80 to 420 K. The results are analyzed with a semi-analytical model combining a density functional theory (DFT) description for ideal ZrNiSn, with a simple analytical correction for the impurity band. The model provides a good quantitative agreement with experiment, describing all salient features in the full temperature span for the Hall, conductivity, and Seebeck measurements, while also reproducing key trends in the Nernst results. This comparison pinpoints the impurity band edge to 40 meV below the conduction band edge, which agrees well with a separate DFT study of a supercell containing Ni interstitials. Moreover, we corroborate our result with a separate study of ZrNiSn0.9Pb0.1 sample showing similar agreement with an impurity band edge shifted to 32 meV below the conduction band.

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preprint2019arXiv

Thermoelectric transport trends in group 4 half-Heusler alloys

The thermoelectric properties of 54 different group 4 half-Heusler (HH) alloys have been studied from first principles. Electronic transport was studied with density functional theory using hybrid functionals facilitated by the $\mathbf{k} \cdot \mathbf{p}$ method, while the temperature dependent effective potential method was used for the phonon contributions to the figure of merit $ZT$. The phonon thermal conductivity was calculated including anharmonic phonon-phonon, isotope, alloy and grain-boundary scattering. HH alloys have an ${\it XYZ}$ composition and those studied here are in the group 4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14 (Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb). The electronic part of the thermal conductivity was found to significantly impact $ZT$ and thus the optimal doping level. Furthermore, the choice of functional was found to significantly affect thermoelectric properties, particularly for structures exhibiting band alignment features. The intrinsic thermal conductivity was significantly reduced when alloy and grain boundary scattering were accounted for, which also reduced the spread in thermal conductivity. It was found that sub-lattice disorder on the ${\it Z}$-site, i.e. the site occupied by group 14 or 15 elements, was more effective than ${\it X}$-site substitution, occupied by group 4 elements. The calculations confirmed that ZrNiSn, ZrCoSb and ZrCoBi based alloys display promising thermoelectric properties. A few other n-type and p-type compounds were also predicted to be potentially excellent thermoelectric materials, given that sufficiently high charge carrier concentrations can be achieved. This study provides insight into the thermoelectric potential of HH alloys and casts light on strategies to optimize thermoelectric performance of multicomponent alloys.

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preprint2016arXiv

Enhancement of thermoelectric properties by energy filtering: Theoretical potential and experimental reality in nanostructured ZnSb

Energy filtering has been suggested by many authors as a means to improve thermoelectric properties. The idea is to filter away low-energy charge carriers in order to increase Seebeck coefficient without compromising electronic conductivity. This concept was investigated in the present paper for a specific material (ZnSb) by a combination of first-principles atomic-scale calculations, Boltzmann transport theory, and experimental studies of the same system. The potential of filtering in this material was first quantified, and it was as an example found that the power factor could be enhanced by an order of magnitude when the filter barrier height was 0.5~eV. Measured values of the Hall carrier concentration in bulk ZnSb were then used to calibrate the transport calculations, and nanostructured ZnSb with average grain size around 70~nm was processed to achieve filtering as suggested previously in the literature. Various scattering mechanisms were employed in the transport calculations and compared with the measured transport properties in nanostructured ZnSb as a function of temperature. Reasonable correspondence between theory and experiment could be achieved when a combination of constant lifetime scattering and energy filtering with a 0.25~eV barrier was employed. However, the difference between bulk and nanostructured samples was not sufficient to justify the introduction of an energy filtering mechanism. The reasons for this and possibilities to achieve filtering were discussed in the paper.

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preprint2016arXiv

Structural and excited-state properties of oligoacene crystals from first principles

Molecular crystals are a prototypical class of van der Waals (vdW) bound organic materials with excited state properties relevant for optoelectronics applications. Predicting the structure and excited state properties of molecular crystals presents a challenge for electronic structure theory, as standard approximations to density functional theory (DFT) do not capture long range vdW dispersion interactions and do not yield excited state properties. In this work, we use a combination of DFT including vdW forces) using both non local correlation functionals and pair wise correction methods (together with many body perturbation theory (MBPT) to study the geometry and excited states, respectively, of the entire series of oligoacene crystals, from benzene to hexacene. We find that vdW methods can predict lattice constants within 1 percent of the experimental measurements, on par with the previously reported accuracy of pairwise approximations for the same systems. We further find that excitation energies are sensitive to geometry, but if optimized geometries are used MBPT can yield excited state properties within a few tenths of an eV from experiment. We elucidate trends in MBPT computed charged and neutral excitation energies across the acene series and discuss the role of common approximations used in MBPT.

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preprint2014arXiv

Interpretation of van der Waals density functionals

The nonlocal correlation energy in the van der Waals density functional (vdW-DF) method [Phys. Rev. Lett. 92, 246401 (2004); Phys. Rev. B 76, 125112 (2007); Phys. Rev. B 89, 035412 (2014)] can be interpreted in terms of a coupling of zero-point energies of characteristic modes of semilocal exchange-correlation (xc) holes. These xc holes reflect the internal functional in the framework of the vdW-DF method [Phys. Rev. B 82, 081101(2010)]. We explore the internal xc hole components, showing that they share properties with those of the generalized-gradient approximation. We use these results to illustrate the nonlocality in the vdW-DF description and analyze the vdW-DF formulation of nonlocal correlation.

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preprint2014arXiv

van der Waals density functionals built upon the electron-gas tradition: Facing the challenge of competing interactions

The theoretical description of sparse matter attracts much interest, in particular for those ground-state properties that can be described by density functional theory (DFT). One proposed approach, the van der Waals density functional (vdW-DF) method, rests on strong physical foundations and offers simple yet accurate and robust functionals. A very recent functional within this method called vdW-DF-cx [K. Berland and P. Hyldgaard, Phys. Rev. B 89, 035412] stands out in its attempt to use an exchange energy derived from the same plasmon-based theory from which the nonlocal correlation energy was derived. Encouraged by its good performance for solids, layered materials, and aromatic molecules, we apply it to several systems that are characterized by competing interactions. These include the ferroelectric response in PbTiO$_3$, the adsorption of small molecules within metal-organic frameworks (MOFs), the graphite/diamond phase transition, and the adsorption of an aromatic-molecule on the Ag(111) surface. Our results indicate that vdW-DF-cx is overall well suited to tackle these challenging systems. In addition to being a competitive density functional for sparse matter, the vdW-DF-cx construction presents a more robust general purpose functional that could be applied to a range of materials problems with a variety of competing interactions.

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preprint2014arXiv

van der Waals forces in density functional theory: The vdW-DF method

A density functional theory (DFT) that accounts for van der Waals (vdW) interactions in condensed matter, materials physics, chemistry, and biology is reviewed. The insights that led to the construction of the Rutgers-Chalmers van der Waals Density Functional (vdW-DF) are presented with the aim of giving a historical perspective, while also emphasising more recent efforts which have sought to improve its accuracy. In addition to technical details, we discuss a range of recent applications that illustrate the necessity of including dispersion interactions in DFT. This review highlights the value of the vdW-DF method as a general-purpose method, not only for dispersion bound systems, but also in densely packed systems where these types of interactions are traditionally thought to be negligible.

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preprint2013arXiv

An analysis of van der Waals density functional components: Binding and corrugation of benzene and C60 on boron nitride and graphene

The adsorption of benzene and C60 on graphene and boron nitride (BN) is studied using density functional theory with the non-local correlation functional vdW-DF. By comparing these systems we can systematically investigate their adsorption nature and differences between the two functional versions vdW-DF1 and vdW-DF2. The bigger size of the C60 molecule makes it bind stronger to the surface than benzene, yet the interface between the molecules and the sheets are similar in nature. The binding separation is more sensitive to the exchange variant used in vdW-DF than to the correlation version. This result is related to the exchange and correlation components of the potential energy curve (PEC). We show that a moderate dipole forms for C60 on graphene, unlike for the other adsorption systems. We find that the corrugation is very sensitive to the variant or version of vdW-DF used, in particular the exchange. Further, we show that this sensitivity arise indirectly through the shift in binding separation caused by changing vdW-DF variant. Based on our results, we suggest a concerted theory-experiment approach to assess the exchange and correlation contributions to physisorption. Using DFT calculations, the corrugation can be linked to the optimal separation, allowing us to extract the exchange-correlation part of the adsorption energy. Molecules with same interfaces to the surface, but different geometries, can in turn cast light on the role of van der Waals forces.

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preprint2013arXiv

An exchange functional that tests the robustness of the plasmon description of the van der Waals density functional

Is the plasmon description within the non-local correlation of the van der Waals density functional by Dion and coworkers (vdW-DF1) robust enough to describe all exchange-correlation components? To address this question, we design an exchange functional, termed LV-PW86r based on this plasmon description as well as recent analysis on exchange in the large $s$-regime. In the regime with reduced gradients $s=|\nabla n|/2n k_{\rm F}(n)$ smaller than $\approx 2.5$, dominating the non-local correlation part of the binding energy, the enhancement factor $F_x(s)$ closely resembles the Langreth-Vosko screened exchange. In the $s$-regime beyond, dominated by exchange, $F_x(s)$ passes smoothly over to the revised Perdew-Wang-86 form. Our tests indicate that vdW-DF1(LV-PW86r) produces accurate separations and binding energies of the S22 data set of molecular dimers as well as accurate lattice constants of layered materials and tightly-bound solids. These results suggest that vdW-DF1 has a good plasmon description in the low-to-moderate $s$-regime.

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preprint2012arXiv

Benchmarking van der Waals Density Functionals with Experimental Data: Potential Energy Curves for H2 Molecules on Cu(111), (100), and (110) Surfaces

Detailed physisorption data from experiment for the H_2 molecule on low-index Cu surfaces challenge theory. Recently, density-functional theory (DFT) has been developed to account for nonlocal correlation effects, including van der Waals (dispersion) forces. We show that the functional vdW-DF2 gives a potential-energy curve, potential-well energy levels, and difference in lateral corrugation promisingly close to the results obtained by resonant elastic backscattering-diffraction experiments. The backscattering barrier is found selective for choice of exchange-functional approximation. Further, the DFT-D3 and TS-vdW corrections to traditional DFT formulations are also benchmarked, and deviations are analyzed.

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preprint2011arXiv

Evaluation of New Density Functional with Account of van der Waals Forces by Use of Experimental H2 Physisorption Data on Cu(111)

Detailed experimental data for physisorption potential-energy curves of H2 on low-indexed faces of Cu challenge theory. Recently, density-functional theory has been developed to also account for nonlocal correlation effects, including van der Waals forces. We show that one functional, denoted vdW-DF2, gives a potential-energy curve promisingly close to the experiment-derived physisorptionenergy curve. The comparison also gives indications for further improvements of the functionals.

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preprint2011arXiv

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures

Inversion- and depletion-regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier which may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonant-tunneling diodes. Here we introduce the concepts of polarization balance and polarization-balanced designs: A structure is polarization balanced when the applied bias match the voltage drop arising from spontaneous and piezeolectric fields. Devices designed to operate at this bias have polarization-balanced designs. These concepts offer a systematic approach to avoid the formation of depletion regions. As a test case, we consider the design of AlN/GaN double barrier structures with Al$_{\tilde{x}}$Ga$_{1-\tilde{x}}$N leads. To guide our efforts, we derive a simple relation between the intrinsic voltage drop arising from polar effects, average alloy composition of the active region, and the alloy concentration of the leads. Polarization-balanced designs secure good filling of the ground state for unbiased structures, while for biased structures with efficient emptying of the active structure it removes the depletion barriers.

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preprint2011arXiv

Theory of Polar Corrections to Donor Binding

We calculate the optical phonon correction to the binding energy of electrons to donors in cubic materials. Previous theories calculated the Rydberg energy reduced by the effective mass and the static dielectric function. They omitted an important energy term from the long-range polarization of the ionized donor, which vanishes for the neutral donor. They also omitted the donor-phonon interaction. Including these terms yields a new formula for the donor binding energy.

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preprint2010arXiv

A general solution to the Schrödinger-Poission equation for charged hard wall: Application to potential profile of an AlN/GaN barrier structure

A general, system-independent formulation of the parabolic Schrödinger-Poisson equation is presented for a charged hard wall in the limit of complete screening by the ground state. It is solved numerically using iteration and asymptotic-boundary conditions. The solution gives a simple relation between the band bending and charge density at an interface. I further develop approximative analytical forms for the potential and wave function, based on properties of the exact solution. Specific tests of the validity of the assumptions leading to the general solution are made. The assumption of complete screening by the ground state is found be a limitation; however, the general solution still provides a fair approximate account of the potential when the bulk is doped. The general solution is further used in a simple model for the potential profile of an AlN/GaN barrier, and gives an approximation which compares well with the solution of the full Schrödinger-Poisson equation.

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preprint2010arXiv

A van der Waals density functional study of adenine on graphite: Single molecular adsorption and overlayer binding

The adsorption of an adenine molecule on graphene is studied using a first-principles van der Waals functional (vdW-DF) [Dion et al., Phys. Rev. Lett. 92, 246401 (2004)]. The cohesive energy of an ordered adenine overlayer is also estimated. For the adsorption of a single molecule, we determine the optimal binding configuration and adsorption energy by translating and rotating the molecule. The adsorption energy for a single molecule of adenine is found to be 711 meV, which is close to the calculated adsorption energy of the similar-sized naphthalene. Based on the single molecular binding configuration, we estimate the cohesive energy of a two-dimensional ordered overlayer. We find a significantly stronger binding energy for the ordered overlayer than for single-molecule adsorption.

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preprint2010arXiv

Structure and binding in crystals of cage-like molecules: hexamine and platonic hydrocarbons

In this paper, we show that first-principle calculations using a van der Waals density functional (vdW-DF), [Phys. Rev. Lett. $\mathbf{92}$, 246401 (2004)] permits determination of molecular crystal structure. We study the crystal structures of hexamine and the platonic hydrocarbons (cubane and dodecahedrane). The calculated lattice parameters and cohesion energy agree well with experiments. Further, we examine the asymptotic accounts of the van der Waals forces by comparing full vdW-DF with asymptotic atom-based pair potentials extracted from vdW-DF. The character of the binding differ in the two cases, with vdW-DF giving a significant enhancement at intermediate and relevant binding separations. We analyze consequences of this result for methods such as DFT-D, and question DFT-D's transferability over the full range of separations.

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preprint2010arXiv

Temperature stability of intersubband transitions in AlN/GaN quantum wells

Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to $400^\circ$C. The self-consistent Schrödinger-Poisson modeling includes temperature effects of the band-gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by $\sim 6$ meV at $400^\circ$C relative to its room temperature value.

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