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Kovur Prashanthi

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Published work

2 published item(s)

preprint2016arXiv

A nanostructured surface increases friction exponentially at the solid-gas interface

According to Stokes' law, a moving solid surface experiences dissipation that is linearly related to its velocity and the viscosity of the medium. This linear dependence on viscosity forms the basis for many characterization techniques for liquids. Unlike viscosities of different liquids, viscosities of gases vary only in a narrow range which limits their use as an effective characterization parameter using moving structures. Here we report experimental results of dissipation showing exponential dependence on viscosity for oscillating surfaces modified with nanostructures. The surface nanostructures alter solid-gas interplay greatly, amplifying the dissipation response exponentially for even minute variations in viscosity. Nanostructured resonator thus allows discrimination of otherwise narrow range of gaseous viscosity making it an ideal detection parameter for analysis. We attribute the observed exponential enhancement to the stochastic nature of interactions of many coupled nanostructures with the gas media.

preprint2016arXiv

Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition

Here we report mid infrared (mid-IR) photothermal response of multi layer MoS2 thin film grown on crystalline (p-type silicon and c-axis oriented single crystal sapphire) and amorphous substrates (Si/SiO2 and Si/SiN) by pulsed laser deposition (PLD) technique. The photothermal response of the MoS2 films was measured as changes in the resistance of MoS2 films when irradiated with mid IR (7 to 8.2 μm) source. We show that it is possible to enhance the temperature coefficient of resistance (TCR) of the MoS2 thin film by controlling the interface through proper choice of substrate and growth conditions. The thin films grown by PLD were characterized using XRD, Raman, AFM, XPS and TEM. High-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrate in a layer-by-layer manner with misfit dislocations. Layer growth morphology is disrupted when grown on substrates with diamond cubic structure such as silicon due to growth twin formation. The growth morphology is very different on amorphous substrates such as Si/SiO2 or Si/SiN. The MoS2 film grown on silicon shows a very high TCR (-2.9% K-1), mid IR sensitivity (delR/R=5.2 %) and responsivity (8.7 V/W) as compared to films on other substrates.