Researcher profile

Konstantin A. Kokh

Konstantin A. Kokh contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Mapping the effect of defect-induced strain disorder on the Dirac states of topological insulators

We provide a detailed microscopic characterization of the influence of defects-induced disorder onto the Dirac spectrum of three dimensional topological insulators. By spatially resolved Landau-levels spectroscopy measurements, we reveal the existence of nanoscale fluctuations of both the Dirac point energy as well as of the Dirac-fermions velocity which is found to spatially change in opposite direction for electrons and holes, respectively. These results evidence a scenario which goes beyond the existing picture based on chemical potential fluctuations. The findings are consistently explained by considering the microscopic effects of local stain introduced by defects, which our model calculations show to effectively couple to topological states, reshaping their Dirac-like dispersion over a large energy range. In particular, our results indicate that the presence of microscopic spatially varying stain, inevitably present in crystals because of the random distribution of defects, effectively couple to topological states and should be carefully considered for correctly describing the effects of disorder.

preprint2016arXiv

Single electron gating of topological insulators

Introducing, observing, and manipulating individual impurities coupled to a host material offers the opportunity to create new device concepts based on single spin and charge states. Because of potential applications in spintronics and magneto-electrics, such an approach would be particularly useful for topological insulators (TI), a recently discovered material class hosting spin-momentum- locked surface states. To make them useful for new technologies, a robust control of their interaction with external perturbations is required. However, traditional approaches such as metal electrodes or doping proved to be problematic and resulted in strong mesoscopic fluctuations making the spin-momentum locking ill-defined. Here, we demonstrate the effective gating of TIs by coupling molecules to their surface which, by using electric fields, allow to dynamically control the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. Our findings make hybrid molecule/TI interfaces functional elements while at the same time pushing miniaturization at its ultimate limit. This opens a new avenue for all electric-controlled spintronic devices based on these fascinating materials.

preprint2015arXiv

Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)

The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.

preprint2014arXiv

Signatures of Dirac fermion-mediated magnetic order

The spin-momentum locking of topological states offers an ideal platform to explore novel magneto-electric effects. These intimately depend on the ability to manipulate the spin texture in a controlled way. Here, we combine scanning tunneling microscopy with single atoms deposition to map the evolution of topological states under the influence of different magnetic perturbations. We obtain signatures of Dirac fermion-mediated magnetic order for extremely dilute adatoms concentrations. This striking observation is found to critically depend on the single adatoms magnetic anisotropy and the position of the Fermi level. Our findings open new perspectives in spin engineering topological states at the atomic scale and pave the way to explore novel spin-related topological phenomena with promising potential for applications.