Researcher profile

Keunhan Park

Keunhan Park contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Revisiting the Figure of Merit of Concentrated Solar Power Receivers

The figure of merit (FOM) is a widely used metric to characterize the performance of concentrated solar power (CSP) receivers by comparing the amount of solar thermal energy retained by the receiver to the incident concentrated solar radiation. However, the FOM is a strong function of the concentration factor and receiver temperature, thus direct comparison of FOM values measured under disparate operating conditions is inappropriate. To remedy this problem, the present study proposes a new metric called the receiver effectiveness calculated by normalizing the actual FOM with its theoretical maximum. The receiver effectiveness can be employed for comparing receiver performances regardless of their operating conditions, and can be treated as more-like the second law efficiency of thermodynamics. In addition, a theoretical limit of the CSP plant efficiency is also examined by combining the maximum FOM and the Carnot efficiency for different concentration factors and receiver temperatures. The calculated maximum CSP plant efficiency clearly indicate that optimizing FOM does not always lead to a better CSP plant performance. Along with the FOM, the proposed receiver effectiveness and maximum CSP system efficiency should be considered as complementary metrics to evaluate the performance of the CSP system.

preprint2021arXiv

Extreme Near-Field Heat Transfer Between Gold Surfaces

Extreme near-field heat transfer between metallic surfaces is a subject of debate as the state-of-the-art theory and experiments are in disagreement on the energy carriers driving heat transport. In an effort to elucidate the physics of extreme near-field heat transfer between metallic surfaces, this Letter presents a comprehensive model combining radiation, acoustic phonon and electron transport across sub-10-nm vacuum gaps. The results obtained for gold surfaces show that in the absence of bias voltage, acoustic phonon transport is dominant for vacuum gaps smaller than ~2 nm. The application of a bias voltage significantly affects the dominant energy carriers as it increases the phonon contribution mediated by the long-range Coulomb force and the electron contribution due to a lower potential barrier. For a bias voltage of 0.6 V, acoustic phonon transport becomes dominant at a vacuum gap of 5 nm, whereas electron tunneling dominates at sub-1-nm vacuum gaps. The comparison of the theory against experimental data from the literature suggests that well-controlled measurements between metallic surfaces are needed to quantify the contributions of acoustic phonon and electron as a function of the bias voltage.

preprint2021arXiv

First-principles calculations of phonon transport across a vacuum gap

Phonon transport across a vacuum gap separating intrinsic silicon crystals is predicted via the atomistic Green's function method combined with first-principles calculations of all interatomic force constants. The overlap of electron wave functions in the vacuum gap generates weak covalent interaction between the silicon surfaces, thus creating a pathway for phonons. Phonon transport, dominated by acoustic modes, exceeds near-field radiation for vacuum gaps smaller than ~ 1 nm. The first-principles-based approach proposed in this work is critical to accurately quantify the contribution of phonon transport to heat transfer in the extreme near field.