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Kazuhiro Marumoto

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cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

MoS2 thin-film transistors spin-states, of conduction electrons and vacancies, distinguished by operando electron spin resonance

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degree of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and vacancies have not been yet elucidated directly from a microscopic viewpoint. We report the spin-states in thin-film electric double-layer transistors using operando electron spin resonance (ESR) spectroscopy. We have observed clearly different ESR signals of the conduction electrons and vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates the lower charge mobilities compared to graphene, which would be useful for improvements of the device characteristics and new applications.

preprint2020arXiv

Operando direct observation of spin states correlated with device performance in perovskite solar cells

Perovskite solar cells are one of the most attracting cells because of remarkably improved power conversion efficiency (PCE) recently. Toward their practical application, it is important not only to increase the PCE but also to elucidate the deterioration mechanism. Here, we present operando direct observation of spin states in the cells using electron spin resonance (ESR) spectroscopy in order to investigate the operation and deterioration mechanisms from a microscopic viewpoint. By simultaneous measurements of solar-cell and ESR characteristics of the same cell, the spin states in the hole-transport material (HTM) spiro-OMeTAD are demonstrated to be changed at the molecular level, which varies the device performance under device operation. These variations are ascribed to the change of hole transport by charge-carrier scatterings and filling of deep trapping levels in the HTM, and to interfacial electric dipole layers formed at the HTM interfaces. In addition, reverse electron transfer from TiO2 layer to the HTM layer is directly demonstrated at the molecular level under ultraviolet light irradiation, which causes the decrease in the HTM doping effect. Thus, conducting such operando microscopic investigation on the internal states in the cells would be useful to obtain a new further guideline for improving the device performance and durability.

preprint2013arXiv

Effect of Energetic Disorder on the Open-Circuit Voltage in Organic Bulk Heterojunction Composites

Under open-circuit condition, the current is not extracted and the photogenerated carriers in principle disappear only by recombination. We study the open-circuit voltage $V_{\rm OC}$ and transient photovoltage under the effect of bulk recombination in a medium with energetic disorder by using the multiple trapping (MT) model. The key parameter in the MT model is the dispersion parameter $α$ given by the ratio of thermal energy to the characteristic energy of trap states. We show that $V_{\rm OC}$ depends linearly on the logarithm of the light intensity and the slope depends on the $α$ of the MT model. Under the continuous irradiation of light, the photovoltage response to the weak perturbation by a pulsed light obeys pseudo-first-order decay. The rate as a function of $V_{\rm OC}$ is independent of the dispersion parameter. However, it obeys the power law as a function of light intensity, and the exponent is given by $1/(1+α)$, which reduces to 1/2 in the absence of energetic disorder.