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Kanika Bansal

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cond-mat.mes-hall cond-mat.mtrl-sci Computer Vision cond-mat.other Neurons and Cognition

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preprint2020arXiv

Flexibility of brain regions during working memory curtails cognitive consequences to lack of sleep

Previous research has shown a clear relationship between sleep and memory, examining the impact of sleep deprivation on key cognitive processes over very short durations or in special populations. Here, we show, in a longitudinal 16 week study, that naturalistic, unfettered sleep modulations in healthy adults have significant impacts on the brain. Using a dynamic networks approach combined with hierarchical statistical modelling, we show that the flexibility of particular brain regions that span a large network including regions in occipital, temporal, and frontal cortex increased when participants performed a working memory task following low sleep episodes. Critically, performance itself did not change as a function of sleep, implying adaptability in brain networks to compensate for having a poor night's sleep by recruiting the necessary resources to complete the task. We further explore whether this compensatory effect is driven by a (i) increase in the recruitment of network resources over time and/or (ii) an expansion of the network itself. Our results add to the literature linking sleep and memory, provide an analytical framework in which to investigate compensatory modulations in the brain, and highlight the brain's resilience to day-to-day fluctuations of external pressures to performance.

preprint2016arXiv

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures

Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their electrical evidences are hardly explored. Here, we examined a forward bias activated differential capacitance response of GaInP-AlGaInP based multi-quantum well laser diodes to trace the presence of excitons using electrical measurements. Occurrence of negative activation energy after light emission is understood as thermodynamical signature of steady state excitonic population under intermediate range of carrier injections. Similar corroborative results are also observed in an InGaAs-GaAs quantum dot laser structure grown by molecular beam epitaxy. With increasing biases, the measured differential capacitance response slowly vanishes. This represents gradual Mott transition of an excitonic phase into an electron-hole plasma in a GaInP-AlGaInP laser diode. This is further substantiated by more and more exponentially looking shapes of high energy tails in electroluminescence spectra with increasing forward bias, which originates from a growing non-degenerate population of free electrons and holes. Such an experimental correlation between electrical and optical properties of excitons can be used to advance the next generation excitonic devices.

preprint2014arXiv

Dynamic frequency dependence of bias activated negative capacitance in semiconductor diodes under high forward bias

We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate processes in different diodes. We explain these observations as the mutual competition of fast and slow electronic transition rates albeit differently. This study provides a better understanding of the physics of junction diodes operating under high charge carrier injection and may lead to superior device functionalities.

preprint2014arXiv

Electrical Signature of Excitonic Electroluminescence and Mott Transition at Room Temperature

Mostly optical spectroscopies are used to investigate existence of excitons, Mott transitions and other exquisite excitonic condensed phases of matter. On the other hand, electrical signatures of excitons are hardly explored. Here we examine steady state, small signal, electrical response of AlGaInP based multi-quantum well laser diodes to identify and investigate the presence of excitons in electroluminescence. This frequency dependent response shows bias activated capacitance following a phenomenological rate equation. Dynamic dependence of this response on frequency reverses after light emission. This results in negative activation energy which we explain with the formation of a stable, intermediate transition state whose average energy matches well with excitonic binding energy of these III-V semiconductors. Hence we identify the presence of excitons which are also responsible for observed electroluminescence at low charge injections by electrical measurements alone. Further increase in charge injection suppresses the electrical signature of excitons representing their Mott transition into electron-hole plasma which is supported by standard optical measurements. This kind of correlation between electrical and optical properties of excitons was not systematically investigated in the past. Therefore, this study demonstrates a fresh experimental approach to electrically probe the rich and complex physics of excitons.

preprint2013arXiv

K-Algorithm A Modified Technique for Noise Removal in Handwritten Documents

OCR has been an active research area since last few decades. OCR performs the recognition of the text in the scanned document image and converts it into editable form. The OCR process can have several stages like pre-processing, segmentation, recognition and post processing. The pre-processing stage is a crucial stage for the success of OCR, which mainly deals with noise removal. In the present paper, a modified technique for noise removal named as K-Algorithm has been proposed, which has two stages as filtering and binarization. The proposed technique shows improvised results in comparison to median filtering technique.

preprint2012arXiv

Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

We report a reversal in negative capacitance and voltage modulated light emission from AlGaInP based multi-quantum well electroluminescent diodes under temperature variation. Unlike monotonically increasing CW light emission with decreasing temperature, modulated electroluminescence and negative capacitance first increase to a maximum and then decrease while cooling down from room temperature. Interdependence of such electronic and optical properties is understood as a competition between defect participation in radiative recombination and field assisted carrier escape from the quantum well region during temperature variation. The temperature of maximum light emission must coincide with the operating temperature of a device for better efficiency.

preprint2011arXiv

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a forward bias level for each modulation frequency. Active participation of sub-bandgap defect states in minority carrier recombination dynamics is sought to explain the results. Negative capacitance is understood as a necessary dielectric response to compensate any irreversible transient changes in the minority carrier reservoir due to radiative recombinations mediated by slowly responding sub-bandgap defects. Experimentally measured variations of the in-phase component of modulated electroluminescence spectra with forward bias levels and modulation frequencies support the dynamic influence of these states in the radiative recombination process. Predominant negative sign of the in-phase component of voltage modulated electroluminescence signal further confirms the bi-molecular nature of light emission. We also discuss how these states can actually affect the net density of minority carriers available for radiative recombination. Results indicate that these sub-bandgap states can suppress external quantum efficiency of such devices under high frequency operation commonly used in optical communication.