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Researcher profile

Kane L Scipioni

Kane L Scipioni contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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2 published item(s)

preprint2015arXiv

Nanoscale Determination of the Mass Enhancement Factor in the Lightly-Doped Bulk Insulator Lead Selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties which could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly-doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale. As such, it opens up a new pathway for investigating the effects of chemical defects, surface doping and strain on the mass enhancement factor.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

In newly discovered topological crystalline insulators (TCIs), the unique crystalline protection of the surface state (SS) band structure has led to a series of intriguing predictions of strain generated phenomena, from the appearance of pseudo-magnetic fields and helical flat bands, to the tunability of the Dirac SS by strain that may be used to construct "straintronic" nanoswitches. However, practical realization of this exotic phenomenology via strain engineering is experimentally challenging and is yet to be achieved. In this work, we have designed an experiment to not only generate and measure strain locally, but to also directly measure the resulting effects on the Dirac SS. We grow heteroepitaxial thin films of TCI SnTe in-situ and measure them by using high-resolution scanning tunneling microscopy (STM). Large STM images were analyzed to determine picoscale changes in the atomic positions which reveal regions of both tensile and compressive strain. Simultaneous Fourier-transform STM was then used to determine the effects of strain on the Dirac electrons. We find that strain continuously tunes the momentum space position of the Dirac points, consistent with theoretical predictions. Our work demonstrates the fundamental mechanism necessary for using TCIs in strain-based applications, and establishes these systems as highly tunable platforms for nanodevices.

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