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K. V. Germash

K. V. Germash contributes to research discovery and scholarly infrastructure.

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preprint2016arXiv

Electromagnetic properties of a double layer graphene system with electron-hole pairing

We study electromagnetic properties of a double layer graphene system in which electrons from one layer are coupled with holes from the other layer. The gauge invariant linear response functions are obtained. The frequency dependences of the transmission, reflection and absorption coefficients are computed. We predict a peak in the reflection and absorption at the frequency equals to the gap in the quasiparticle spectrum. It is shown that the electron-hole pairing results in an essential modification of the spectrum of surface TM plasmons. We find that the optical TM mode splits into a low frequency undamped branch and a high frequency damped branch. At zero temperature the lower branch disappears. It is established that the pairing does not influence the acoustic TM mode. It is also shown that the pairing opens the frequency window in the subgap range for the surface TE wave.

preprint2015arXiv

Diamagnetism and suppression of screening as hallmarks of electron-hole pairing in a double layer graphene system

We study how the electron-hole pairing reveals itself in the response of a double layer graphene system to the vector and scalar potentials. Electron-hole pairing results in a rigid (London)relation between the current and the difference of vector potentials in two adjacent layers. The diamagnetic effect can be observed in multiple connected systems in the magnetic field parallel to the graphene layers. Such an effect would be considered as a hallmark of the electron-hole pairing, but the value of the effect is extremely small. Electron-hole pairing significantly changes the response to the scalar potential, as well. It results in a complete (at zero temperature) or partial (at finite temperature) suppression of screening of the electric field of a test charge situated at some distance to the double layer system. A strong increase of the electric field induced by the test charge under decrease in temperature can be considered as a spectacular hallmark of the electron-hole pairing.

preprint2013arXiv

Electron-hole pairing in topological insulator heterostructures in the quantum Hall state

A thin film of a topological insulator (TI) on a dielectric substrate and a bulk TI - dielectric film - bulk TI structure are considered as natural double-well heterostructures suitable for realizing the counterflow superconductivity. The effect is connected with pairing of electrons and holes belonging to different surfaces of TI and the transition of a gas of electron-hole pairs into a superfluid state. The case of TI heterostructures subjected to a strong perpendicular magnetic field is considered. It is shown that such systems are characterized by two critical temperatures - a mean-field temperature of pairing and a much smaller temperature of the superfluid transition. The dependence of the critical temperatures on the magnetic field is computed. The advantages of TI based structures in comparison with GaAs heterostructures as well as graphene based heterostructures are discussed.