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K. Takanashi

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cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall

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preprint2020arXiv

Enhancement of anomalous Nernst effect in Ni/Pt superlattice

We report an enhancement of the anomalous Nernst effect (ANE) in Ni/Pt (001) epitaxial superlattices. The transport and magneto-thermoelectric properties were investigated for the Ni/Pt superlattices with various Ni layer thicknesses (${\it t}$). The anomalous Nernst coefficient was increased up to more than 1 $μ$V K$^{-1}$ for 2.0 nm ${\leq}$ ${\it t}$ ${\leq}$ 4.0 nm, which was the remarkable enhancement compared to the bulk Ni. It has been found that the large transverse Peltier coefficient ($α$$_{xy}$), reaching $α$$_{xy}$ = 4.8 A K$^{-1}$ m$^{-1}$ for ${\it t}$ = 4.0 nm, plays a prime role for the enhanced ANE of the Ni/Pt (001) superlattices.

preprint2020arXiv

Perpendicularly Magnetized Ni / Pt (001) Epitaxial Superlattice

A perpendicularly magnetized ferromagnetic layer is an important building block for recent/future highdensity spintronic memory applications. This paper reports on the fabrication of perpendicularly magnetized Ni / Pt superlattices and the characterization of their structures and magnetic properties. The optimization of film growth conditions allowed us to grow epitaxial Ni / Pt (001) superlattices on SrTiO$_{3}$ (001) single crystal substrates. We investigated their structural parameters and magnetic properties as a function of the Ni layer thickness, and obtained a high uniaxial magnetic anisotropy energy of 1.9 x 10$^{6}$ erg/cm$^{3}$ for a [Ni (4.0 nm) / Pt (1.0 nm)] superlattice. In order to elucidate the detailed mechanism on perpendicular magnetic anisotropy for the Ni / Pt (001) superlattices, the experimental results were compared with the first-principles calculations. It has been found that the strain effect is a prime source of the emergence of perpendicular magnetic anisotropy.

preprint2019arXiv

Magnetization reversal, damping properties and magnetic anisotropy of L10-ordered FeNi thin films

L10 ordered magnetic alloys such as FePt, FePd, CoPt and FeNi are well known for their large magnetocrystalline anisotropy. Among these, L10-FeNi alloy is economically viable material for magnetic recording media because it does not contain rare earth and noble elements. In this work, L10-FeNi films with three different strengths of anisotropy were fabricated by varying the deposition process in molecular beam epitaxy system. We have investigated the magnetization reversal along with domain imaging via magneto optic Kerr effect based microscope. It is found that in all three samples, the magnetization reversal is happening via domain wall motion. Further ferromagnetic resonance (FMR) spectroscopy was performed to evaluate the damping constant and magnetic anisotropy. It was observed that the FeNi sample with moderate strength of anisotropy exhibits low value of damping constant ~ 4.9X10^-3. In addition to this, it was found that the films possess a mixture of cubic and uniaxial anisotropies.

preprint2010arXiv

Surface-assisted Spin Hall Effect in Au Films with Pt Impurities

We show, both experimentally and theoretically, a novel route to obtain giant room temperature spin Hall effect due to surface-assisted skew scattering. In the experiment, we report the spin Hall effect in Pt-doped Au films with different thicknesses $t_N$. The giant spin Hall angle $γ_S$ = $0.12 \pm 0.04$ is obtained for $t_N$ = 10 nm at room temperature, while it is much smaller for $t_N$ = 20 nm sample. Combined ab initio and quantum Monte Carlo calculations for the skew scattering due to a Pt impurity show $γ_S$ $\cong$ 0.1 on the Au (111) surface, while it is small in bulk Au. The quantum Monte Carlo results show that the spin-orbit interaction of the Pt impurity on the Au (111) surface is enhanced, because the Pt 5d levels are lifted to the Fermi level due to the valence fluctuation. In addition, there are two spin-orbit interaction channels on the Au (111) surface, while only one in bulk Au.

preprint1999arXiv

Effect of Coulomb blockade on STM current through a granular film

The electron transport through an array of tunnel junctions consisting of an STM tip and a granular film is studied both theoretically and experimentally. When the tunnel resistance between the tip and a granule on the surface is much larger than those between granules, a bottleneck of the tunneling current is created in the array. It is shown that the period of the Coulomb staircase(CS) is given by the capacitance at the bottleneck. Our STM experiments on Co-Al-O granular films show the CS with a single period at room temperature. This provides a new possibility for single-electron-spin-electronic devices at room temperature.