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Researcher profile

K. S. Narayan

K. S. Narayan contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Confinement Highlights the Different Electrical Transport Mechanisms Prevailing in Conducting Polymers

We study the differences in electrical charge transport dynamics of the conductivity enhancement of poly(3,4-ethylenedioxythiophene) (PEDOT) derivatives under geometrical confinement. The results of polymer blend poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) and a polymer-monomer blend, poly(3,4- ethylenedioxythiophene):tosylate, highlight the role of dopants and processing conditions of these systems under confinement. The prevailing transport length scales in confined geometry of characteristic dimensions originate from varying disorder in these polymer systems. These observable differences in two different PEDOTs introduced by molecular level reorganization can be utilized to tune conducting polymer systems for efficient electrical and thermoelectric properties. The electrical conductivity σ of the polymer system, which is a function of the electronic structure at molecular level and a connectivity parameter, has been probed in cylindrical-alumina nanoscaffolds of various channel diameters, at different frequencies ω and temperatures T. The observations also emphasize the role of disorder in these conducting polymer systems.

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preprint2022arXiv

Visualization of carrier transport in lateral metal-perovskite-metal structures and its influence on device operation

The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics, especially at the metal-perovskite interface, and its influence on device operation are not widely understood. This work presents the dominant transport mechanisms in methylammonium lead iodide (MAPbI3) perovskite-based asymmetric metal-electrode lateral devices. The device operation is studied with inter-electrode lengths varying from 4 μm to 120 μm. Device characteristics indicate distinct ohmic and space-charge limited current (SCLC) regimes that are controlled by the inter-electrode length and applied bias. The electric-potential mapping using Kelvin-Probe microscopy across the device indicates minimal ion-screening effects and the presence of a transport barrier at the metal-MAPbI3 junction. Further, photocurrent imaging of the channel using near-field excitation-scanning microscopy reveals dominant recombination and charge-separation zones. These lateral devices exhibit photodetector characteristics with a responsivity of about 51 mA/W in self-powered mode and 5.2 A/W at 5 V bias, in short-channel devices (4 μm). The low device capacitance enables a fast light-switching response of ~12 ns.

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preprint2020arXiv

Impact of Trap Filling on Carrier Diffusion in MAPbBr$_3$ Single Crystals

We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter, $L_d$, which is a measure of effective carrier diffusion. The $L_d$ magnitudes for electrons and holes were determined to be ~ 13.3 $μ$m and ~ 13.8 $μ$m respectively. A marginal increase in uniform light bias ($\leq 5 \times 10^{15}$ photons/cm$^2$) increases the modulated photocurrent magnitude and reduces the $L_d$ parameter by a factor of two and three for electrons and holes respectively, indicating that the recombination is not monomolecular. The $L_d$ variations were correlated to the features in photoluminescence lifetime studies. Analysis of lifetime variation shows intensity-dependent monomolecular and bimolecular recombination trends with recombination constants determined to be ~ 9.3 $\times 10^6$ s$^{-1}$ and ~ 1.4 $\times 10^{-9}$ cm$^{3}$s$^{-1}$ respectively. Based on the trends of $L_d$ and lifetime, it is inferred that the sub-band-gap trap recombination influences carrier transport in the low-intensity excitation regime, while bimolecular recombination and transport dominate at high intensity.

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