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K. Pappert

K. Pappert contributes to research discovery and scholarly infrastructure.

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preprint2011arXiv

Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.

preprint2010arXiv

Fully electrically read-write device out of a ferromagnetic semiconductor

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.

preprint2007arXiv

Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.