Researcher profile

K. N. Koshelev

K. N. Koshelev contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Droplet deformation and fragmentation by ultra-short laser pulses

We report on the experimental studies of the deformation and fragmentation of liquid metal droplets by picosecond and subpicosecond laser pulses. The experiments were performed with laser irradiance varying in 10E13-10E15 W/cm^2 range. The observed evolution of the droplet shape upon the impact dramatically differs from the previously reported for nanosecond laser pulses. Instead of flattening the droplet undergoes rapid asymmetric expansion and transforms into a complex shape which can be interpreted as two conjunct spheroid shells and finally fragments. We explain the described hydrodynamic response to the ultra-short impact as a result of the propagation of the laser-induced convergent shockwave through the volume of droplet.

preprint2016arXiv

Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen

We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by microwave cavity resonance spectroscopy. It was found that the measured electron densities can be used to derive the integral amount of plasma in the cavity. However, in some regimes, the impact of the setup geometry, EUV spectrum, and EUV induced secondary emission should be taken into account. The influence of these parameters on the generated plasma and the measured electron density is discussed.

preprint2016arXiv

Numerical and experimental studies of the carbon etching in EUV-induced plasma

We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.