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K. Küster

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2 publications

preprint2022arXiv

Probing the interlayer coupling in 2HH-NbS2_2 via soft x-ray angle-resolved photoemission spectroscopy

In the large family of two-dimensional (2D) layered materials including graphene, its honeycomb analogs, and transition-metal dichalcogenides, the interlayer coupling plays a rather intriguing role. On the one hand, the weak van der Waals interaction that holds the layers together endows these compounds with quasi-2D properties, which might imply small interlayer effects on the electronically active bands. On the other hand, the oft-witnessed differences in electronic, optical, and magnetic behaviors of monolayers, bilayers, and multilayers of the same compound must have as their microscopic origin the detailed interlayer hopping parameters. Given the few experimental reports that have attempted to explicitly extract these parameters, we employ soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to probe the interlayer coupling in superconducting 2HH-NbS2_2. We visualize the S 3pzp_z bands that disperse with respect to the out-of-plane momentum and introduce a simple tight-binding model to extract the interlayer hopping parameters. From first-principles calculations, we clarify how atomic distances and the proper accounting for screening via hybrid functionals influence these bands. The knowledge of interlayer hopping parameters is particularly pertinent in NbS2_2, where recent experiments have uncovered fingerprints of finite-momentum superconductivity in the bulk material and heterostructures.

preprint2019arXiv

Spin splitting and strain in epitaxial monolayer WSe2_2 on graphene

We present the electronic and structural properties of monolayer WSe2_{2} grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe2_{2} valence band at K‾\overline{\mathrm{K}} was ΔSO=0.469±0.008Δ_\mathrm{SO}=0.469\pm0.008 eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer WSe2_{2} to be aWSe2=3.2757±0.0008A˚a_\mathrm{WSe_2}=3.2757\pm0.0008 \mathrm{Å}. This indicates a lattice compression of -0.19 % from bulk WSe2_{2}. By using experimentally determined graphene lattice constant (aMLG=2.4575±0.0007A˚a_\mathrm{MLG}=2.4575\pm0.0007 \mathrm{Å}), we found that a 3×\times3 unit cell of the slightly compressed WSe2_{2} is perfectly commensurate with a 4×\times4 graphene lattice with a mismatch below 0.03 %, which could explain why the monolayer WSe2_{2} is compressed on MLG. From XRD and first-principles calculations, however, we conclude that the observed size of strain is negligibly small to account for a discrepancy in ΔSOΔ_\mathrm{SO} found between exfoliated and epitaxial monolayers in earlier ARPES. In addition, angle-resolved, ultraviolet and X-ray photoelectron spectroscopy shed light on the band alignment between WSe2_{2} and MLG/SiC and indicate electron transfer from graphene to the WSe2_{2} monolayer. As further revealed by atomic force microscopy, the WSe2_{2} island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of WSe2_{2} favors the weak van der Waals interactions with graphene while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.

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