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K. Koshiishi

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cond-mat.supr-con cond-mat.mtrl-sci

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preprint2021arXiv

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here, we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration (nFS ) estimated from the Fermi-surface area is significantly larger than the Ce concentration x and the new nFS-based SC dome of PLCCO is more extended towards the overdoped side than the x-based SC dome derived for samples prepared using the conventional annealing method.

preprint2015arXiv

Fermi Surfaces and $p$ - $d$ Hybridization in the Diluted Magnetic Semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

The electronic structure of the new diluted magnetic semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ ( $x=0.30$ , $y=0.15$ ) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $Γ$ point, a hole corrugated cylinder surrounding the $Γ$ and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ . This is contrasted with Ga $_{1-x}$ Mn $_{x}$ As (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ and in the impurity band in GaMnAs.

preprint2015arXiv

In-plane electronic anisotropy in the antiferromagnetic-orthorhombic phase of isovalent-substituted Ba(Fe $_{1-x}$ Ru $_x$ ) $_2$ As $_2$

We have studied the anisotropy in the in-plane resistivity and the electronic structure of isovalent Ru-substituted BaFe $_2$ As $_2$ in the antiferromagnetic-orthorhombic phase using well-annealed crystals. The anisotropy in the residual resistivity component increases in proportional to the Ru dopant concentration, as in the case of Co-doped compounds. On the other hand, both the residual resistivity and the resistivity anisotropy induced by isovalent Ru substitution is found to be one order of magnitude smaller than those induced by heterovalent Co substitution. Combined with angle-resolved photoemission spectroscopy results, which show almost the same anisotropic band structure both for the parent and Ru-substituted compounds, we confirm the scenario that the anisotropy in the residual resistivity arises from anisotropic impurity scattering in the magneto-structurally ordered phase rather than directly from the anisotropic band structure of that phase.

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K. Koshiishi

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3 publications

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

Fermi Surfaces and $p$ - $d$ Hybridization in the Diluted Magnetic Semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

In-plane electronic anisotropy in the antiferromagnetic-orthorhombic phase of isovalent-substituted Ba(Fe $_{1-x}$ Ru $_x$ ) $_2$ As $_2$

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K. Koshiishi

Research overview

Is this your work?

3 publications

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

Fermi Surfaces and ppp-ddd Hybridization in the Diluted Magnetic Semiconductor Ba1−x_{1-x}1−x​Kx_{x}x​(Zn1−y_{1-y}1−y​Mny_{y}y​)2_{2}2​As2_{2}2​ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

In-plane electronic anisotropy in the antiferromagnetic-orthorhombic phase of isovalent-substituted Ba(Fe1−x_{1-x}1−x​Rux_xx​)2_22​As2_22​

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Fermi Surfaces and $p$ - $d$ Hybridization in the Diluted Magnetic Semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

In-plane electronic anisotropy in the antiferromagnetic-orthorhombic phase of isovalent-substituted Ba(Fe $_{1-x}$ Ru $_x$ ) $_2$ As $_2$