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K. Kheng

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2016arXiv

P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarization discontinuities on the device performance. We demonstrate that the presence of Mg does not perturb the In incorporation in InGaN, and it leads to a significant reduction of the stacking fault density. p-In0.3Ga0.7N layers with a hole concentration of 3.2x1018 cm-3 are demonstrated. InGaN homojunction devices show a peak EQE = 14+-2% in the blue-to-orange spectral region, and an extended cutoff to 600 nm.

preprint2011arXiv

Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires

Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states ($ΔE\in [4, 9.2 ]$ meV) and large spin flip rates between these states. Statistics on many QDs showed that this splitting depends on the QD size. Moreover, we measured an increase of the spin flip rate to the dark states with increasing energy splitting. We explain this observation with a model taking into account the fact that the exciton-phonon interaction depends on the bright to dark exciton energy splitting as well as on the size and shape of the exciton wave function. It also has consequences on the exciton line intensity at high temperature.

preprint2011arXiv

Subnanosecond spectral diffusion of a single quantum dot in a nanowire

We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot.

preprint2004arXiv

Correlated Photon Emission from a Single II-VI Quantum Dot

We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an ultrafast photon correlation set-up allowed us to see an antibunching effect on photons emitted by excitons recombining in a single CdTe/ZnTe QD, as well as cross-correlation within the biexciton ($X_{2}$)-exciton ($X$) radiative cascade from the same dot. Fast microchannel plate photomultipliers and a time-correlated single photon module gave us an overall temporal resolution of 140 ps better than the typical exciton lifetime in II-VI QDs of about 250ps.