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K. C. Rustagi

K. C. Rustagi contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2016arXiv

Investigations of temperature-dependent photoluminescence of uncoated and silver-coated CdS quantum dots

We report temperature-dependent photoluminescence (PL) studies and PL relaxation dynamics for uncoated and silver-coated CdS quantum dots (QDs). Room-temperature photoluminescence studies indicate that the presence of silver coating on CdS QD samples enhances the blue luminescence corresponding to the band-to-band transitions by a factor of ten compared to the uncoated samples. Furthermore, the decay time measurements using Time Correlated Single Photon Counting technique demonstrate Förster resonance energy transfer (FRET) between silver-shell and CdS-core in silver-coated CdS QD samples. A detailed investigation of temperature-dependent PL spectra of uncoated CdS QD samples reveals the role of thermally-activated surface-trap states, exciton-LO phonon coupling and ionized impurity scattering. In case of silver-coated QDs, the temperature-dependent PL peak energy corresponding to the band-to-band transitions presents a consecutive red-blue-red shift (S-shaped) behavior. Whereas, the full width at half maximum (FWHM) shows a successive blue-red-blue shift (inverted S-shaped) characteristic with increasing temperature.

preprint2016arXiv

Observation of four-photon absorption and determination of corresponding nonlinearities in CdS quantum dots

Bound- and excited-state electronic nonlinearities in CdS quantum dots have been investigated by Degenerate Four-Wave Mixing (DFWM) and Z-scan techniques in the femtosecond time regime. This QD sample shows Kerr-type nonlinearity for incident beam intensity below 0.18 TW/cm$^2$. However, further increment in intensity results in four-photon absorption (4PA) indicated by open- and closed-aperture Z-scan experiments. Comparing open-aperture Z-scan experimental results with theoretical models, the 4PA coefficient $α_4$ has been deduced. Furthermore, third-order nonlinear index $γ$ and refractive-index change coefficient $σ_r$ corresponding to excited-state electrons due to 4PA have been calculated from the closed-aperture Z-scan results. UV-visible absorption and photoluminescence experimental results are analyzed towards estimating band gap energy and defect state energy. Time Correlated Single Photon Counting (TCSPC) was employed to determine the decay time corresponding to band-edge and defect states. The linear and nonlinear optical techniques have allowed the direct observation of lower and higher-order electronic states in CdS quantum dots.

preprint2011arXiv

Re-examination of the SiGe Raman spectra - Linear chain approximation and ab initio calculations

We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of the phenomenological Percolation scheme, originally developed for zincblende alloys, after ab initio calibration of the intrinsic Si-Si, Ge-Ge and Si-Ge Raman efficiencies. The 1D-cluster scheme introduces a seven-oscillator [1x(Ge-Ge), 4x(Si-Ge), 2x(Si-Si)] Raman behavior for SiGe, which considerably deviates from the currently admitted six-oscillator [1x(Ge-Ge), 1x(Si-Ge), 4x(Si-Si)] one. The 1D-cluster re-assignment of Raman lines is based on remarkable intensity-interplays with composition, known from the literature, but so far not properly understood. It is independently supported by ab initio calculation of the frequencies of bond-stretching modes along prototype impurity motifs taken as quasi-linear. Different numbers of Raman modes per bond indicate different sensitivities to the local environment of the Ge-Ge (insensitive), Si-Si (sensitive to 1st neighbors) and Si-Ge (sensitive to 2nd neighbors) bond-stretchings. Last, we compare the SiGe Percolation scheme with the current version for zincblende alloys, using GaAsP as a natural reference. The SiGe vs. GaAsP comparison is supported by ab initio calculation of local lattice relaxation/dynamics related to prototype impurity motifs that are directly transposable to the two crystal structures.