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Researcher profile

Junyi He

Junyi He contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Confinement effect enhanced Stoner ferromagnetic instability in monolayer 1T-VSe2

Monolayer 1T-VSe2 has been reported as a room-temperature ferromagnet. In this work, by using first-principles calculations, we unveil that the ferromagnetism in monolayer 1T-VSe2 is originated from its intrinsic huge Stoner instability enhanced by the confinement effect, which can eliminate the interlayer coupling, and lead to a drastic increase of the density of states at the Fermi level due to the presence of Van Hove singularity. Our calculations also demonstrate that the Stoner instability is very sensitive to the interlayer distance. These results provide a useful route to modulate the nonmagnetic to ferromagnetic transition in few-layers or bulk 1T-VSe2, which also shed light on the enhancement of its Curie temperature by enlarging the interlayer distance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of a Si-containing topological Dirac semimetal CaAl2Si2

There has been an upsurge in the discovery of topological quantum materials, where various topological insulators and semimetals have been theoretically predicted and experimentally observed. However, only very few of them contains silicon, the most widely used element in electronic industry. Recently, ternary compound CaAl2Si2 has been predicted to be a topological Dirac semimetal, hosting Lorentz-symmetry-violating quasiparticles with a strongly tilted conical band dispersion. In this work, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we investigated the comprehensive electronic structure of CaAl2Si2. A pair of topological Dirac crossings is observed along the kz direction, in good agreement with the ab initio calculations, confirming the topological Dirac semimetal nature of the compound. Our study expands the topological material family on Si-containing compounds, which have great application potential in realizing low-cost, nontoxic electronic device with topological quantum states.

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