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Researcher profile

Jun-Qiang Lu

Jun-Qiang Lu contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2013arXiv

Electronic transmission in Graphene suppressed by interlayer interference

We investigate electronic transport property of a graphene monolayer covered by a graphene nanoribbon. We demonstrate that electronic transmission of a monolayer can be reduced when covered by a nanoribbon. The transmission reduction occurs at different energies determined by the width of nanoribbon. We explain the transmission reduction by using interference between wavefunctions in the monolayer and the nanoribbon. Furthermore, we show the transmission reduction of a monolayer is combinable when covered by more than one nanoribbon and propose a concept of "combination of control" for nano-application design.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nanoscale capacitance: a classical charge-dipole approximation

Modeling nanoscale capacitance presents particular challenge because of dynamic contribution from electrodes, which can usually be neglected in modeling macroscopic capacitance and nanoscale conductance. We present a model to calculate capacitances of nano-gap configurations and define effective capacitances of nanoscale structures. The model is implemented by using a classical atomic charge-dipole approximation and applied to calculate capacitance of a carbon nanotube nano-gap and effective capacitance of a buckyball inside the nano-gap. Our results show that capacitance of the carbon nanotube nano-gap increases with length of electrodes which demonstrates the important roles played by the electrodes in dynamic properties of nanoscale circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Metal-to-semiconductor transition in squashed armchair carbon nanotubes

We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and Green's function method. We demonstrate a metal-to-semiconductor transistion while squashing the nanotubes and a general mechanism for such transistion. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy. We show that the transition has to be achieved by a combined effect of breaking of mirror symmetry and bond formation between the flattened faces in the squashed nanotubes.

0 citations0 reviewsNo code linkedOpen access