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Researcher profile

Jun-Feng Wang

Jun-Feng Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phcond-mat.mes-hallphysics.app-phastro-ph.HEcond-mat.supr-con

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Published work

6 published item(s)

preprint2023arXiv

High sensitivity silicon carbide divacancy-based thermometer

Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing time of the color centers. In this work, we realize a high sensitivity silicon carbide divacancy-based thermometer using the thermal Carr-Purcell-Meiboom-Gill (TCPMG) method. First, the zero field splitting D of PL6 divacancy as a function of temperature is measured with a linear slope of -99.7 kHz/K. The coherence times of TCPMG pulses linearly increase with the pulse number and the longest coherence time is about 21 us, which is ten times larger than dephasing time. The corresponding temperature sensing sensitivity is 13.4 mK/Hz1/2, which is about 15 times higher than previous results. Finally, we monitor the laboratory temperature variations for 24 hours using the TCMPG pulse. The experiments pave the way for the applications of silicon carbide-based high sensitivity thermometer in the semiconductor industry, biology, and materials sciences.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films

Antiferromagnetic (AF) spin fluctuations are commonly believed to play a key role in electron pairing of cuprate superconductors. In electron-doped cuprates, it is still in paradox about the interplay among different electronic states in quantum perturbations, especially between superconducting and magnetic states. Here, we report a systematic transport study on cation-optimized La2-xCexCuO4 (x = 0.10) thin films in high magnetic fields. We find an AF quantum phase transition near 60 T, where the Hall number jumps from nH =-x to nH = 1-x, resembling the change of nH at the AF boundary (xAF = 0.14) tuned by Ce doping. In the AF region a spin dependent state manifesting anomalous positive magnetoresistance is observed, which is closely related to superconductivity. Once the AF state is suppressed by magnetic field, a polarized ferromagnetic state is predicted, reminiscent of the recently reported ferromagnetic state at the quantum endpoint of the superconducting dome by Ce doping. The magnetic field that drives phase transitions in a similar but distinct manner to doping thereby provides a unique perspective to understand the quantum criticality of electron-doped cuprates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature

Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration six-fold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature and the coherence time T2 can be reached to around 17.1 μs. Furthermore, investigation of fluorescence properties of single NV centers shows that they are room temperature photostable single photon sources at telecom range. Taking advantages of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Jet Properties of Compact Steep-Spectrum Sources and an Eddington-Ratio-Driven Unification Scheme of Jet Radiation in Active Galactic Nuclei

Compact steep-spectrum sources (CSSs) likely represent a population of young radio-loud active galactic nuclei (AGNs) and have been identified as gamma-ray emitting sources. We present a comprehensive analysis of their gamma-ray emission observed with Fermi/LAT and establish their broadband spectral energy distributions (SEDs). We derive their jet properties by the SED fits with a two-zone leptonic model for radiations from the compact core and large-scale extended region, and explore the possible signature of a unification picture of jet radiation among subclasses of AGNs. We show that the observed gamma-rays of CSSs with significant variability are contributed by the radiation of their compact cores via the inverse Compton process of the torus photons. The derived power-law distribution index of the radiating electrons is p_1~1.5-1.8, magnetic field strength is B~0.15-0.6 G, and Doppler boosting factor is δ~2.8-8.9. Assuming that the jet is composed of electron-positron pairs, the compact cores of CSSs are magnetized and have a high radiation efficiency, similar to that of flat spectrum radio quasars. The six CSSs on average have higher Eddington ratio and black hole mass than those non-GeV-detected CSSs, and they follow the correlation between the jet power in units of Eddington luminosity (P_jet/L_Edd) and Eddington ratio (R_Edd) with other sub-classes of AGNs, P_jet/L_Edd~R_Edd^0.52, indicating that R_Edd would be a key physical driver for the unification scheme of AGN jet radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Room-temperature coherent control of implanted defect spins in silicon carbide

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide

Defect spins in silicon carbide have become promising platforms with respect to quantum information processing and quantum sensing. Indeed, the optically detected magnetic resonance (ODMR) of defect spins is the cornerstone of the applications. In this work, we systematically investigate the contrast and linewidth of laser-and microwave power-dependent ODMR with respect to ensemble-divacancy spins in silicon carbide at room temperature. The results suggest that magnetic field sensing sensitivity can be improved by a factor of 10 for the optimized laser and microwave power range. The experiment will be useful for the applications of silicon carbide defects in quantum information processing and ODMR-dependent quantum sensing.

0 citations0 reviewsNo code linkedOpen access