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Juliana M. Morbec

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Published work

2 published item(s)

preprint2013arXiv

Jahn-Teller distortion induced magnetic phase transition in cubic BaFeO$_{3}$

Using density functional theory (DFT) with local density approximation (LDA) and generalized gradient approximation (GGA) correlation functionals, the electronic and magnetic structures of cubic BaFeO$_{3}$ in the ferromagnetic (FM) and antiferromagnetic (AFM) states are studied. Our LDA/GGA and LDA$+U$/GGA$+U$ results show that cubic BFO has a FM ground state, in agreement with recent experimental works. Two types of Jahn-Teller (JT) distortions, denoted as JT1 and JT2, are considered. We find FM to ferrimagnetic (FIM) and FM to AFM magnetic phase transitionn in the JT1 and JT2 type of distortions, respectively. Larger strains are required for the FM-AFM transition as compared to the FM-FIM. DFT$+U$ calculations also show that the magnetic moments dramatically decrease at large strains due to strong overlapping between the Fe and O atoms. The origins of these transitions is discussed in terms of a competition between double exchange and superexchange interactions. Oxygen and Fe displacements are therefore responsible for the magnetic phase transitions and the reduction of the magnetic moments.

preprint2013arXiv

Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: an ab initio study

Using ab-initio calculations based on density functional theory, we investigate the effects of vacancies on the electronic and magnetic properties of zigzag SiC nanoribbons (Z-SiCNR). Single (V_C and V_Si) and double (V_SiV_Si and V_SiV_C) vacancies are observed to induce magnetism in Z-SiCNRs. The presence of a single V_Si does not affect the half-metallic behavior of pristine Z-SiCNRs; however, a single V_C leads to a transition from half-metallic to metallic behavior in Z-SiCNRs due to the edge Si p orbitals and the atoms surrounding the vacancy. The interactions of vacancies with foreign impurity atoms (B and N) are also investigated and it is observed that V_SiN_C does not only suppress the oscillatory type magnetism of V_SiV_C, but also retains the half-metallic character of the pristine Z-SiCNRs. The defect formation energies of vacancies can be reduced by substitutional B and N atoms. We believe that ferromagnetism is expected if Z-SiCNR are grown under suitable conditions.