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Researcher profile

Judith L. MacManus-Driscoll

Judith L. MacManus-Driscoll contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hall

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Published work

4 published item(s)

preprint2020arXiv

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Influence of Atomic Roughness at The Uncompensated Fe/CoO (111) Interface on Exchange Bias Effect

The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)-oriented antiferromagnetic CoO films on exchange bias with ferromagnetic Fe grown on top. The surface roughness is controlled at the atomic scale, over a range below ~ 0.35 nm, by varying layer thickness of the CoO films. It is observed that both exchange bias field ($H_{E}$) and coercivity ($H_{C}$) extensively depend on the atomic scale roughness of the CoO (111) at the interface with Fe film. An opposite dependence of $H_{E}$ and $H_{C}$ on interface roughness was found, which was ascribed to partially compensated spin states induced by the atomic roughness at the fully uncompensated CoO (111) surfaces and was corroborated using the Monte Carlo simulations. Moreover, the onset temperature for $H_{C}$ is found to be up to ~ 80 K below the blocking temperature ($T_{B}$) and the temperature dependence of $H_{C}$ follows the power law with a critical exponent equal to one, which indicates that, in this system, $H_{C}$ is more of an interface-related property than $H_{E}$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices

Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has been hampered by the lack of suitable p-type buffer layers. In this work we develop a p-type CuOx buffer layer, which can be grown uniformly over the perovskite device without damaging the perovskite or organic charge transport layers, can be grown using industrially scalable techniques and has high hole mobility (4.3 +/- 2 cm2 V-1 s-1), high transmittance (>95%), and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV). Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOx buffer layer. Our work demonstrates a new approach to integrate PSCs into tandem configurations, as well as enable the development of other devices that need high quality p-type layers.

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preprint2019arXiv

Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides

Thin (approximately 10 nm) oxide buffer layers grown over lead-halide perovskite device stacks are critical for protecting the perovskite against mechanical and environmental damage. However, the limited perovskite stability restricts the processing methods and temperatures (<=110 C) that can be used to deposit the oxide overlayers, with the latter limiting the electronic properties of the oxides achievable. In this work, we demonstrate an alternative to existing methods that can grow pinhole-free TiOx (x = 2.00+/-0.05) films with the requisite thickness in <1 min without vacuum. This technique is atmospheric pressure chemical vapor deposition (AP-CVD). The rapid but soft deposition enables growth temperatures of >=180 °C to be used to coat the perovskite. This is >=70 °C higher than achievable by current methods and results in more conductive TiOx films, boosting solar cell efficiencies by >2%. Likewise, when AP-CVD SnOx (x ~ 2) is grown on perovskites, there is also minimal damage to the perovskite beneath. The SnOx layer is pinhole-free and conformal, which reduces shunting in devices, and increases steady-state efficiencies from 16.5% (no SnOx) to 19.4% (60 nm SnOx), with fill factors reaching 84%. This work shows AP-CVD to be a versatile technique for growing oxides on thermally-sensitive materials.

0 citations0 reviewsNo code linkedOpen access