Researcher profile

Juan A. Sans

Juan A. Sans contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Pbca-type In2O3: the lost pressure-induced post-corundum phase

Contradictory results of high-pressure studies in cubic bixbyite-type indium oxide (c-In2O3) at room temperature (RT) have motivated us to perform high-pressure powder x-ray diffraction and Raman scattering measurements in this material. On increasing pressure c-In2O3 undergoes a transition to the Rh2O3-II structure. On decreasing pressure Rh2O3-II-type In2O3 undergoes a transition to a previously unknown phase which is isostructural to Rh2O3-III. On further decrease of pressure, another phase transition to corundum-type In2O3, which is metastable at room conditions, is observed. Recompression of metastable corundum-type In2O3 shows that the Rh2O3-III phase is the post-corundum phase. Our results are supported by theoretical ab initio calculations which show that the Rh2O3-III phase could be present in other sesquioxides, thus leading to a revision of the pressure-temperature phase diagrams of sesquioxides.

preprint2013arXiv

Probing quantum confinement within single core-multishell nanowires

Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging, and calls for further studies on the underlying mechanisms of optoelectronic nanodevices.