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Joseph Kioseoglou

Joseph Kioseoglou contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Data-driven simulation and characterisation of gold nanoparticle melting

The simulation and analysis of the thermal stability of nanoparticles, a stepping stone towards their application in technological devices, require fast and accurate force fields, in conjunction with effective characterisation methods. In this work, we develop efficient, transferable, and interpretable machine learning force fields for gold nanoparticles based on data gathered from Density Functional Theory calculations. We use them to investigate the thermodynamic stability of gold nanoparticles of different sizes (1 to 6 nm), containing up to 6266 atoms, concerning a solid-liquid phase change through molecular dynamics simulations. We predict nanoparticle melting temperatures in good agreement with available experimental data. Furthermore, we characterize the solid-liquid phase change mechanism employing an unsupervised learning scheme to categorize local atomic environments. We thus provide a data-driven definition of liquid atomic arrangements in the inner and surface regions of a nanoparticle and employ it to show that melting initiates at the outer layers.

preprint2022arXiv

Phonon Interference at the Atomic Scale

Phonons diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles as voids or amorphous-inclusions. The diffraction patterns caused by these nano-architectured systems of the same order as the phonon wavelengths are similar to the ones predicted by a simple Fresnel-Kirchhoff integral, with a few differences due to the nature of the obstacle and the anisotropy of crystalline silicon. These findings give evidence of the wave nature of phonons, can help to a better comprehension of the interaction of phonons with nanoobjects and at long term can be useful for intelligent thermal management and phonon frequency filtering at the nanoscale.

preprint2022arXiv

Thermal insulation and heat guiding using nanopatterned MoS2

In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to their electric ones is crucial to enable efficient transfer of excess heat away from the electronic components. In this work we propose structures based on free-standing, few-layer, nanopatterned MoS2 that insulate and guide heat in the in-plane direction. We arrive at these designs via a thorough study of the in-plane thermal conductivity as a function of thickness, porosity, and temperature in both pristine and nanopatterned MoS2 membranes. Two-laser Raman thermometry was employed to measure the thermal conductivities of a set of free-standing MoS2 flakes with diameters greater than 20 um and thicknesses from 5 to 40 nm, resulting in values from 30 to 85 W/mK, respectively. After nanopatterning a square lattice of 100-nm diameter holes with a focused ion beam we have obtained a greater than 10-fold reduction of the thermal conductivities for the period of 500 nm and values below 1 W/mK for the period of 300 nm. The results were supported by equilibrium molecular dynamic simulations for both pristine and nanopatterned MoS2. The selective patterning of certain areas results in extremely large difference in thermal conductivities within the same material. Exploitation of this effect enabled for the first time thermal insulation and heat guiding in the few-layer MoS2. The patterned regions act as high thermal resistors: we obtained a thermal resistance of 4x10-6 m2K/W with only four patterned lattice periods of 300 nm, highlighting the significant potential of MoS2 for thermal management applications.

preprint2019arXiv

Decorated dislocations against phonon propagation for thermal management

The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the core of dislocations in wurtzite GaN is found to affect the thermal properties of the material, as it leads to a significant decrease of the thermal conductivity, along with an enhancement of its anisotropic character. The thermal conductivity of In-decorated dislocations is compared to the ones of pristine GaN, InN, and random and ordered InxGa1-xN alloy, to examine the impact of doping. Results are explained by the stress maps, the bonding properties and the phonon density of states of the aforementioned systems. The decorated dislocations engineering is a novel way to tune, among other transport properties, the effective thermal conductivity of materials at the nanoscale, which can lead to the manufacturing of interesting candidates for thermoelectric or anisotropic thermal dissipation devices.