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Jose L. Mendoza-Cortes

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Published work

2 published item(s)

preprint2022arXiv

Spin Current Density Functional Theory of the Quantum Spin-Hall Phase

The spin current density functional theory (SCDFT) is the generalization of the standard DFT to treat a fermionic system embedded in the effective external field produced by the spin-orbit coupling interaction. Even in the absence of a spin polarization, the SCDFT requires the electron-electron potential to depend on the spin currents $\mathbf{J}^x$, $\mathbf{J}^y$ and $\mathbf{J}^z$, which only recently was made possible for practical relativistic quantum-mechanical simulations [Phys. Rev. B {\bf 102}, 235118 (2020)]. Here, we apply the SCDFT to the quantum spin-Hall phase and show how it improves (even qualitatively) the description of its electronic structure relative to the DFT. We study the Bi (001) 2D bilayer and its band insulator to topological insulator phase transition (via $s+p_z \leftrightarrow p_x +ip_y$ band inversion) as a function of mechanical strain. We show that the explicit account of spin currents in the electron-electron potential of the SCDFT is key to the appearance of a Dirac cone at the $Γ$ point in the valence band structure at the onset of the topological phase transition. Finally, the valence band structure of this system is rationalized using a simple first-order $\mathbf{k} \cdot \mathbf{p}$ quasi-degenerate perturbation theory model.

preprint2020arXiv

Understanding disorder in 2D materials: the case of carbon doping of Silicene

We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).