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José Coutinho

José Coutinho contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2023arXiv

Theory of shallow and deep boron defects in 4H-SiC

Abstract Despite advances toward improving the quality of $p$-type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related optical, junction, and paramagnetic resonance experiments available in the literature. A conspicuous puzzle is the observation of two shallow boron defects with rather distinct axial orientations as found by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) data. This feature is not observed in material doped with other group-III elements. Another open issue involves conflicting conclusions from photoluminescence and EPR studies of a deeper boron center, which has been linked to rather distinct models, either based on substitutional or vacancy-related boron defects. We unlock these and other problems by means of first-principles calculations, where the temperature-dependent stability, the electronic activity, and the paramagnetic response of boron defects in 4H-SiC are investigated.

preprint2022arXiv

Crucial role of vibrational entropy in the Si(111)-7$\times$7 surface structure stability

We investigate the relative thermodynamic stability of the $3\times3$, $5\times5$, $7\times7$, $9\times9$ and infinitely large structures related to the dimers-adatoms-stacking faults family of Si$(111)$ surface reconstructions by means of first-principles calculations. Upon accounting for the vibrational contribution to the surface free energy, we find that the $5\times5$ structure is more stable than the $7\times7$ at low temperatures. While a phase transition is anticipated to occur at around room temperature, the $7\times7\rightarrow5\times5$ transformation upon cooling is hindered by the limited mobility of Si atoms. The results not only flag a crucial role of vibrational entropy in the formation of the $7\times7$ structure at elevated temperatures, but also point for its metastable nature below room temperature.

preprint2022arXiv

Dynamics of hydrogen in silicon at finite temperatures from first-principles

Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si quenched from above $T\sim700\,^{\circ}$C to room temperature. Based on first-principles calculations, we investigated the thermodynamics of hydrogen monomers and dimers at finite temperatures within the harmonic approximation. The free energies of formation indicate that the population of H$^{-}$ cannot be neglected when compared that of H$^{+}$ at high temperatures. The results allow us to propose that the formation of molecules occurs during cooling processes, in the temperature window $T\sim700\textrm{-}500\,$K, above which the molecules collide with Si-Si bonds and dissociate, and below which the fraction of H$^{-}$ becomes negligible. The formation of H$^{-}$ and most notably of a fast-diffusing neutral species could also provide an explanation for the apparent \emph{accelerated} diffusivity of atomic hydrogen at elevated temperatures in comparison to the figures extrapolated from measurements carried out at cryogenic temperatures. We finally show that the observed diffusivity of the molecules is better described upon the assumption that they are nearly free rotors, all along the minimum energy path, including at the transition state.

preprint2020arXiv

Characterisation of negative-U defects in semiconductors

This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of negative-U defects in semiconductors. This is done by complementing the account with a description of the work that resulted in some of the most detailed, and yet more complex defect models in semiconductors. The essential physics underlying the negative-U behaviour is presented, including electronic correlation, electron-phonon coupling, disproportionation, defect transition levels and rates. Techniques for the analysis of the experimental data and modelling are also introduced, namely defect statistics, kinetics of carrier capture and emission, defect transformation, configuration coordinate diagrams and other tools. We finally include a showcase of several works that led to the identification of some of the most impacting negative-U defects in group-IV and compound semiconductors.