Source author record

Jorge Sofo

Jorge Sofo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Heavy Dirac fermions in a graphene/topological insulator hetero-junction

The low energy physics of both graphene and surface states of three-dimensional topological insulators is described by gapless Dirac fermions with linear dispersion. In this work, we predict the emergence of a "heavy" Dirac fermion in a graphene/topological insulator hetero-junction, where the linear term almost vanishes and the corresponding energy dispersion becomes highly non-linear. By combining {\it ab initio} calculations and an effective low-energy model, we show explicitly how strong hybridization between Dirac fermions in graphene and the surface states of topological insulators can reduce the Fermi velocity of Dirac fermions. Due to the negligible linear term, interaction effects will be greatly enhanced and can drive "heavy" Dirac fermion states into the half quantum Hall state with non-zero Hall conductance.

preprint2015arXiv

Electrically tunable multiple Dirac cones in thin films of (LaO)2(SbSe2)2 family of materials

Two-dimensional Dirac physics has aroused great interests in condensed matter physics ever since the discovery of graphene and topological insulators due to its importance in both fundamental physics and device applications. The ability to control the properties of Dirac cones, such as bandgap and Fermi velocity, is essential for the occurrence of various new phenomena and the development of next-generation electronic devices. Based on first-principles calculations and an analytical effective model, we propose a new Dirac system with eight Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials with an external gate voltage. The advantage of this system lies in its tunability: the existence of gapless Dirac cones, their positions, Fermi velocities and anisotropy all can be controlled by an experimentally feasible gate voltage. We identify the layer dependent spin texture induced by spin-orbit coupling as the underlying physical reason for the tunability of Dirac cones in this system. As a consequence, we show that the electrically tunable quantum anomalous Hall effect with a high Chern number can be induced by introducing magnetization into this system.