Researcher profile

Jonathan H. Prechtel

Jonathan H. Prechtel contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

A frequency-stabilized source of single photons from a solid-state qubit

Single quantum dots are solid-state emitters which mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single photon source. One outstanding problem is that there is considerable noise in the emission frequency, making it very difficult to couple the quantum dot to another quantum system. We solve this problem here with a dynamic feedback technique that locks the quantum dot emission frequency to a reference. The incoherent scattering (resonance fluorescence) represents the single photon output whereas the coherent scattering (Rayleigh scattering) is used for the feedback control. The fluctuations in emission frequency are reduced to 20 MHz, just ~ 5% of the quantum dot optical linewidth, even over several hours. By eliminating the 1/f-like noise, the relative fluctuations in resonance fluorescence intensity are reduced to ~ 10E-5 at low frequency. Under these conditions, the antibunching dip in the resonance fluorescence is described extremely well by the two-level atom result. The technique represents a way of removing charge noise from a quantum device.

preprint2013arXiv

High resolution coherent population trapping on a single hole spin in a semiconductor

We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physics-like dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify this process as charge noise by, first, demonstrating that the hole spin g-factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.