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Researcher profile

Jonathan Baugh

Jonathan Baugh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phquant-phphysics.chem-ph

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Published work

6 published item(s)

preprint2021arXiv

Observation and manipulation of a phase separated state in a charge density wave material

The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the nearly commensurate (NC) to commensurate (C) transition. We perform scanning tunneling microscopy on exfoliated ultrathin flakes of 1T-TaS$_\textrm{2}$ within the NC-C hysteresis window, finding evidence that the observed non-equilibrium phases consist of intertwined, irregularly shaped NC-like and C-like domains. After applying lateral electrical signals to the sample we image changes in the geometric arrangement of the different regions. We use a phase separation model to explore the relationship between electronic inhomogeneity present in ultrathin 1T-TaS$_\textrm{2}$ and its bulk resistivity. These results demonstrate the role of phase competition morphologies in determining the properties of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Single-electron transport in a molecular Hubbard dimer

Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us to study the role of electron-electron interactions in the transport setting. In particular, we empirically determine the molecule's on-site and inter-site electron-electron repulsion energies, which are in good agreement with density functional calculations, and establish the molecular electronic structure within various charge states. The gate-dependent rectification behavior is used to further confirm the selection rules and state degeneracies resulting from the Hubbard model. We therefore demonstrate that current flow through the molecule is governed by a non-trivial set of vibrationally coupled electronic transitions between various many-body states, and experimentally confirm the importance of electron-electron interactions in single-molecule devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Self-driven oscillation in Coulomb blockaded suspended carbon nanotubes

Suspended carbon nanotubes are known to support self-driven oscillations due to electromechanical feedback under certain conditions, including low temperatures and high mechanical quality factors. Prior reports identified signatures of such oscillations in Kondo or high-bias transport regimes. Here, we observe self-driven oscillations that give rise to significant conduction in normally Coulomb-blockaded low-bias transport. Using a master equation model, the self-driving is shown to result from strongly energy-dependent electron tunneling, and the dependencies of transport features on bias, gate voltage, and temperature are well reproduced.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Simulated coherent electron shuttling in silicon quantum dots

Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each controlled by a single gate voltage. One-dimensional potentials are derived from a three-dimensional electrostatic model, and used to construct an effective Hamiltonian for efficient simulation. Control pulse sequences are designed by maintaining a fixed adiabaticity, so that different shuttling conditions can be systematically compared. We first use these tools to optimize the device geometry for maximum transport velocity, considering only orbital states and neglecting valley and spin degrees of freedom. Taking realistic geometrical constraints into account, charge shuttling speeds up to $\sim$300 m/s preserve adiabaticity. Coherent spin transport is simulated by including spin-orbit and valley terms in an effective Hamiltonian, shuttling one member of a singlet pair and tracking the entanglement fidelity. With realistic device and material parameters, shuttle speeds in the range 10-100 m/s with high spin entanglement fidelities are obtained when the tunneling energy exceeds the Zeeman energy. High fidelity also requires the inter-dot valley phase difference to be below a threshold determined by the ratio of tunneling and Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we find that the primary source of infidelity is a coherent spin rotation that is correctable, in principle. The results pertain to proposals for large-scale spin qubit processors in isotopically purified silicon that rely on coherent shuttling of spins to rapidly distribute quantum information between computational nodes.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Few-electrode design for silicon MOS quantum dots

Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunnel barriers are naturally formed by gaps between electrodes and controlled by adjacent accumulation gates. The accumulation gates define the electron reservoirs and provide tunability of the tunnel rate of nearly 8.5 decades/V, determined by a combination of charge sensor electron counting measurements and by direct transport. The valley splitting in the few-electron regime is probed by magneto-spectroscopy up to a field of 6 T, providing an estimate for the ground-state gap of 290 $μ$eV. We show preliminary characterization of a double quantum dot, demonstrating that this design can be extended to linear dot arrays that should be useful in applications like electron shuttling. These results motivate further innovations in MOS quantum dot design that can improve the scalability prospects for spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Network architecture for a topological quantum computer in silicon

A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only 7 quantum dots, and nodes are separated on the micron scale, creating useful space for wiring interconnects and integration of conventional transistor circuits. Entanglement is distributed between neighbouring nodes by loading spin singlets locally and then shuttling one member of the pair through a linear array of empty dots. Each node contains one data qubit, two ancilla qubits, and additional dots to facilitate electron shuttling and measurement of the ancillas. A four-node GHZ state is realized by sharing three internode singlets followed by local gate operations and ancilla measurements. Further local operations and measurements produce an X or Z stabilizer on four data qubits, which is the fundamental operation of the surface code. Electron shuttling is simulated using a simplified gate electrode geometry without explicit barrier gates, and demonstrates that adiabatic transport is possible on timescales that do not present a speed bottleneck to the processor. An important shuttling error in a clean system is uncontrolled phase rotation due to the modulation of the electronic g-factor during transport, owing to the Stark effect. This error can be reduced by appropriate electrostatic tuning of the stationary electron's g-factor. Using reasonable noise models, we estimate error thresholds with respect to single and two-qubit gate fidelities as well as singlet dephasing errors during shuttling. A twirling protocol transforms the non-Pauli noise associated with exchange gate operations into Pauli noise, making it possible to use the Gottesman-Knill theorem to efficiently simulate large codes.

0 citations0 reviewsNo code linkedOpen access