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Jon Tomas Gudmundsson

Jon Tomas Gudmundsson contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

An Online Data Analysis Framework for Small-Scale Physics Experiments

A robust and flexible architecture capable of providing real-time analysis on diagnostic data is of crucial importance to physics experiments. In this paper, we present such an online framework, used in June 2025 as part of the HRMT-68 experiment, performed at the HiRadMat facility at CERN, using the Super Proton Synchrotron (SPS) beam line. HRMT-68 was a fixed-target laboratory astrophysics experiment aiming to identify plasma instabilities generated by a relativistic electron-positron beam during traversal of an argon plasma. This framework was essential for experimental data acquisition and analysis, and can be adapted for a broad range of experiments with a variety of experimental diagnostics. The framework's modular and customizable design enabled us to rapidly observe and extract emergent features from a diverse range of diagnostic data. Simultaneously, it allowed for both the introduction of new diagnostic devices and the modification of our analysis as features of interest were identified. As a result, we were able to effectively diagnose equipment malfunction, and infer the beam's response to varying bunch duration, beam intensity, and the plasma state without resorting to offline analysis, at which time adjustment or improvement would have been impossible. We present the features of this agile framework, whose codebase we have made publicly available, which can be adapted for future experiments with minimal modification.

preprint2020arXiv

Effect of substrate bias on microstructure of epitaxial film grown by HiPIMS: An atomistic simulation

We explore combination of high power impulse magnetron sputtering (HiPIMS) and substrate bias for the epitaxial growth of Cu film on Cu (111) substrate by molecular dynamics simulation. A fully ionized deposition flux was used to represent the high ionization fraction in the HiPIMS process. To mimic different substrate bias, we assumed the deposition flux with a flat energy distribution in the low, moderate and high energy ranges. We also compared the results of fully ionized flux with results assuming a completely neutral flux, in analogy with thermal evaporation. It is confirmed that in the low energy regime, HiPIMS presents a slightly smoother surface and more interface mixing compared to that of thermal evaporation. In the moderate energy HiPIMS, however, an atomically smooth surface was obtained with a slight increase in the interface mixing compared to low energy HiPIMS. In the high energy regime, HiPIMS presents severe interface mixing with a smooth surface but limited growth due to resputtering from the surface. The results also indicate that fewer crystal defects appear in the film for moderate energy HiPIMS. We attribute this behavior to the repetition frequency of collision events. In particular high energy HiPIMS suffers from high repetition of collision events which does not allow reconstruction of the film. While in the low energy HiPIMS there are not enough events to overcome island growth. At moderate energy, collision events repeat in a manner that provides enough time for reconstruction which results in a smooth surface, fewer defects and limited intermixing.