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Johanna Fischer

Johanna Fischer contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Gate-controlled skyrmion and domain wall chirality

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.

preprint2020arXiv

Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures

We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a multidomain antiferromagnetic configuration whenever the field is aligned along the film normal. For in-plane field rotations, we clearly observe a sinusoidal resistivity oscillation characteristic for the SMR due to a coherent rotation of the Neel vector. The maximum SMR amplitude of 0.25% is, surprisingly, twice as high as for prototypical ferrimagnetic Y3Fe5O12/Pt heterostructures. The SMR effect saturates at much smaller magnetic fields than in comparable antiferromagnets, making the alpha-Fe2O3/Pt system particularly interesting for room-temperature antiferromagnetic spintronic applications.

preprint2020arXiv

Spin Hall magnetoresistance in antiferromagnetic insulators

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $α$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an external magnetic field in three orthogonal planes, we record the longitudinal and the transverse resistivities of Pt and observe characteristic resistivity modulations consistent with the SMR effect. We analyze both their amplitude and phase and compare the data to the results from a prototypical collinear ferrimagnetic Y3Fe5O12/Pt bilayer. The observed magnetic field dependence is explained in a comprehensive model, based on two magnetic sublattices and taking into account magnetic field-induced modifications of the domain structure. Our results show that the SMR allows us to understand the spin configuration and to investigate magnetoelastic effects in antiferromagnetic multi-domain materials. Furthermore, in $α$-Fe2O3/Pt bilayers, we find an unexpectedly large SMR amplitude of $2.5 \times 10^{-3}$, twice as high as for prototype Y3Fe5O12/Pt bilayers, making the system particularly interesting for room-temperature antiferromagnetic spintronic applications.

preprint2018arXiv

Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures

We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by 90° and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field-dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic field induced modifications of the domain structure in antiferromagnets. With this generic model we are further able to estimate the strength of the magnetoelastic coupling in antiferromagnets. Our detailed study shows that the spin Hall magnetoresistance is a versatile tool to investigate the magnetic spin structure as well as magnetoelastic effects, even in antiferromagnetic multidomain materials.