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Johan Verbeeck

Johan Verbeeck appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.app-phcond-mat.mes-hallcond-mat.mtrl-sciphysics.acc-phquant-ph

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Published work

6 published item(s)

preprint2021arXiv

HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale

Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by applying Geometric Phase Analysis or image fitting procedures. However, HR-STEM images regularly suffer from scanning distortions and sample drift during image acquisition. In this paper, we propose a new scanning strategy that drastically reduces artefacts due to drift and scanning distortion, along with extending the field of view. The method allows flexible tuning of the spatial resolution and decouples the choice of field of view from the need for local atomic resolution. It consists of the acquisition of a series of independent small subimages containing an atomic resolution image of the local lattice. All subimages are then analysed individually for strain by fitting a nonlinear model to the lattice images. The obtained experimental strain maps are quantitatively benchmarked against the Bessel diffraction technique. We demonstrate that the proposed scanning strategy approaches the performance of the diffraction technique while having the advantage that it does not require specialized diffraction cameras.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evaluation of different rectangular scan strategies for STEM imaging

STEM imaging is typically performed by raster scanning a focused electron probe over a sample. Here we investigate and compare three different scan patterns, making use of a programmable scan engine that allows to arbitrarily set the sequence of probe positions that are consecutively visited on the sample. We compare the typical raster scan with a so-called 'snake' pattern where the scan direction is reversed after each row and a novel Hilbert scan pattern that changes scan direction rapidly and provides an homogeneous treatment of both scan directions. We experimentally evaluate the imaging performance on a single crystal test sample by varying dwell time and evaluating behaviour with respect to sample drift. We demonstrate the ability of the Hilbert scan pattern to more faithfully represent the high frequency content of the image in the presence of sample drift. It is also shown that Hilbert scanning provides reduced bias when measuring lattice parameters from the obtained scanned images while maintaining similar precision in both scan directions which is especially important when e.g. performing strain analysis. Compared to raster scanning with flyback correction, both snake and Hilbert scanning benefit from dose reduction as only small probe movement steps occur.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique

Moiré fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Bandgap measurement of high refractive index materials by off-axis EELS

In the present work, Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy STEM-EELS has been used to explore experimental set-ups that allows bandgaps of high refractive index materials to be determined. Semi-convergence and -collection angles in the micro-radian range were combined with off-axis or dark field EELS to avoid relativistic losses and guided light modes in the low loss range to contribute to the acquired EEL spectra. Off-axis EELS further suppressed the zero loss peak and the tail of the zero loss peak. The bandgap of several GaAs-based materials were successfully determined by direct inspection and without any background subtraction of the EEL spectra. The presented set-up does not require that the acceleration voltage is set to below the Cerenkov limit and can be applied over the entire acceleration voltage range of modern TEMs and for a wide range of specimen thicknesses.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A novel vortex generator and mode converter for electrons

A mode converter for electron vortex beams is described. Numerical simulations, confirmed by experiment, show that the converter transforms a vortex beam with topological charge $m=\pm 1$ into beams closely resembling Hermite-Gaussian HG$_{10}$ and HG$_{01}$ modes. The converter can be used as a mode discriminator or filter for electron vortex beams. Combining the converter with a phase plate turns a plane wave into modes with topological charge $m=\pm 1$. This combination serves as a generator of electron vortex beams of high brilliance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mapping spin-polarised transitions with atomic resolution

The coupling between Angstrom-sized electron probes and spin polarised electronic transitions shows that the inelastically scattered probe is in a mixed state containing electron vortices with non-zero orbital angular momentum. These electrons create an asymmetric intensity distribution in energy filtered diffraction patterns, giving access to maps of the magnetic moments with atomic resolution. A feasibility experiment shows evidence of the predicted effect. Potential applications are column-by-column maps of magnetic ordering, and the creation of Angstrom-sized free electrons with orbital angular momentum by inelastic scattering in a thin ferromagnetic foil.

0 citations0 reviewsNo code linkedOpen access