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Researcher profile

Joël Eymery

Joël Eymery contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2013arXiv

Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam

We report on the quantitative determination of the strain map in a strained Silicon-On-Insulator (sSOI) line with a 200x70 nm^2 cross-section. In order to study a single line as a function of time, we used an X-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence and intensity. We demonstrate how it is possible to reconstruct the line deformation at the nanoscale, and follow its evolution as the line relaxes under the influence of the X-ray nanobeam.

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preprint2011arXiv

Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the homogeneity of the nucleation selectivity of c-oriented hexagonal prismatic nanostructures at high temperature (1040\circ C). It consists of an initial GaN nucleation step at 950 \circ C followed by ammonia annealing before high temperature growth. Structural analyses show that GaN nanostructures are grown in epitaxy with c-sapphire with lateral overgrowths on the mask. Strain and dislocations are observed at the interface due to the large GaN/sapphire lattice mismatch in contrast with the high quality of the relaxed crystals in the lateral overgrowth area. A cathodoluminescence study as a function of the GaN nanostructure size confirms these observations: the lateral overgrowth of GaN nanostructures has a low defect density and exhibits a stronger near band edge (NBE) emission than the crystal in direct epitaxy with sapphire. The shift of the NBE positions versus nanostructure size can be mainly attributed to a combination of compressive strain and silicon doping coming from surface mask diffusion.

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