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Joel B. Varley

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cond-mat.mtrl-sci physics.app-ph physics.comp-ph cond-mat.dis-nn

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preprint2022arXiv

Role of carbon and hydrogen in limiting $n$ -type doping of monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga $_2$ O $_3$ , Si $_{Ga}$ is an effective shallow donor, but in Al $_2O_3$ Si $_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga $_2$ O $_3$ , but behaves as a compensating acceptor in n-type Al $_2O_3$ . Interpolation indicates that Si is an effective donor in (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si $_{cation}$ -H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga $_2$ O $_3$ , but can be stable in a negative charge state in (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ when x>5%. Substitutional C on an O site (C $_O$ ) always acts as an acceptor in n-type (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ , but will incorporate only under relatively O-poor conditions. C $_O$ -H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga $_2$ O $_3$ grown by MOCVD. We also investigate C $_{cation}$ -H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga $_2$ O $_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

preprint2022arXiv

Tackling Disorder in $γ$ -Ga $_2$ O $_3$

Ga $_2$ O $_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga $_2$ O $_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$ -Ga $_2$ O $_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the $γ$ -phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$ -Ga $_2$ O $_3$ . The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.

preprint2020arXiv

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze (VGF) and Czochralski method in mixed Ar+O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in \b{eta}-Ga2O3 with a measured electron concentration 2 x 10^19 cm^-3 , mobility 80-65 cm^2 /Vs, and resistivity down to 5 mOhm-cm in our samples. The concentration of Hf was measured to be 1.3 x 10^19 atoms/cm^3 using glow discharge mass spectroscopy (GDMS) on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 x 10^19 cm-3).

preprint2019arXiv

On Quantifying Large Lattice Relaxations in Photovoltaic Devices

Temporal variations of Cu(In,Ga)Se $_2$ photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h were analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type doping increased with charge injection and decreased with temperature at low injection conditions. Lattice relaxation can account for both trends and activation energies extracted from the data were approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type doping with greater stability. First principles calculations providing revised activation energies for the ( $V_{Se}-V_{Cu}$ ) complex suggest that this defect does not account for the metastability observed here.

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Joel B. Varley

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4 publications

Role of carbon and hydrogen in limiting $n$ -type doping of monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$

Tackling Disorder in $γ$ -Ga $_2$ O $_3$

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

On Quantifying Large Lattice Relaxations in Photovoltaic Devices

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Joel B. Varley

Research overview

Is this your work?

4 publications

Role of carbon and hydrogen in limiting nnn-type doping of monoclinic (Alx_xx​Ga1−x_{1-x}1−x​)2_22​O3_33​

Tackling Disorder in γγγ-Ga2_22​O3_33​

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

On Quantifying Large Lattice Relaxations in Photovoltaic Devices

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Building this map preview

Role of carbon and hydrogen in limiting $n$ -type doping of monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$

Tackling Disorder in $γ$ -Ga $_2$ O $_3$