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Jochen Rohrer

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Published work

6 published item(s)

preprint2011arXiv

Computational scheme for ab-initio predictions of chemical compositions interfaces realized by deposition growth

We present a novel computational scheme to predict chemical compositions at interfaces as they emerge in a growth process. The scheme uses the Gibbs free energy of reaction associated with the formation of interfaces with a specific composition as predictor for their prevalence. It explicitly accounts for the growth conditions by rate-equation modeling of the deposition environment. The Bell-Evans-Polanyi principle motivates our emphasis on an effective nonequilibrium thermodynamic description inspired by chemical reaction theory. We illustrate the scheme by characterizing the interface between TiC and alumina. Equilibrium thermodynamics favors a nonbinding interface, being in conflict with the wear-resistant nature of TiC/alumina multilayer coatings. Our novel scheme predicts that deposition of a strongly adhering interface is favored under realistic conditions.

preprint2011arXiv

Relative stability of $6H$-SiC$\{0001\}$ surface terminations and formation of graphene overlayers by Si evaporation

We present density functional theory (DFT) calculations for 6H-SiC$\{0001\}$ surfaces with different surface stackings and terminations. We compare the relative stability of different $(0001)$ and $(000\bar1)$ surfaces in terms of their surface free energies. Removing surface and subsurface Si atoms, we simulate the formation of graphene and graphene-like overlayers by Si evaporation. We find that overlayers with a different nature of bonding are preferred at the two non-equivalent surface orientations. At $(0001)$, a chemically bonded, highly strained and buckled film is predicted. At $(000\bar1)$, a van der Waals (vdW) bonded overlayer is preferred. We quantify the vdW binding and show that it can have a doping effect on electron behavior in the overlayer.

preprint2011arXiv

Stacking and band structure of van der Waals bonded graphane multilayers

We use density functional theory and the van der Waals density functional (vdW-DF) method to determine the binding separation in bilayer and bulk graphane and study the changes in electronic band structure that arise with the multilayer formation. The calculated binding separation (distance between center-of-mass planes) and binding energy are 4.5-5.0 Å (4.5-4.8 Å) and 75-102 meV/cell (93-127 meV/cell) in the bilayer (bulk), depending on the choice of vdW-DF version. We obtain the corresponding band diagrams using calculations in the ordinary generalized gradient approximation for the geometries specified by our vdW-DF results, so probing the indirect effect of vdW forces on electron behavior. We find significant band-gap modifications by up to -1.2 eV (+4.0 eV) in various regions of the Brillouin zone, produced by the bilayer (bulk) formation.

preprint2010arXiv

Ab-initio thermodynamics of deposition growth: surface terminations of CVD titanium carbide and nitride

We present a calculational method to predict terminations of growing or as-deposited surfaces as a function of the deposition conditions. Such characterizations are valuable for understanding catalysis and growth phenomena. The method combines ab-initio density functional theory (DFT) calculations and experimental thermodynamical data with a rate-equations description of partial pressures in the reaction chamber. The use of rate equations enables a complete description of a complex gas environment in terms of a few, (experimentally accessible) parameters. The predictions are based on comparisons between free energies of reaction associated with the formation of surfaces with different terminations. The method has an intrinsic non-equilibrium character. In the limit of dynamic equilibrium (with equal chemical potential in the surface and the gas phase) we find that the predictions of the method coincide with those of standard ab-initio based equilibrium thermodynamics. We illustrate the method for chemical vapor deposition (CVD) of TiC(111) and TiN(111), and find that the emerging termination can be controlled both by the environment and the growth rate.

preprint2010arXiv

Understanding adhesion at as-deposited interfaces from ab initio thermodynamics of deposition growth: thin-film alumina on titanium carbide

We investigate the chemical composition and adhesion of chemical vapour deposited thin-film alumina on TiC using and extending a recently proposed nonequilibrium method of ab initio thermodynamics of deposition growth (AIT-DG) [Rohrer J and Hyldgaard P 2010 Phys. Rev. B 82 045415]. A previous study of this system [Rohrer J, Ruberto C and Hyldgaard P 2010 J. Phys.: Condens. Matter 22 015004] found that use of equilibrium thermodynamics leads to predictions of a non-binding TiC/alumina interface, despite the industrial use as a wear-resistant coating. This discrepancy between equilibrium theory and experiment is resolved by the AIT-DG method which predicts interfaces with strong adhesion. The AIT-DG method combines density functional theory calculations, rate-equation modelling of the pressure evolution of the deposition environment and thermochemical data. The AIT-DG method was previously used to predict prevalent terminations of growing or as-deposited surfaces of binary materials. Here we extent the method to predict surface and interface compositions of growing or as-deposited thin films on a substrate and find that inclusion of the nonequilibrium deposition environment has important implications for the nature of buried interfaces.

preprint2009arXiv

Ab initio structure modeling of complex thin-film oxides: thermodynamical stability of TiC/thin-film alumina

We present an efficient and general method to identify promising candidate configurations for thin-film oxides and to determine structural characteristics of (metastable) thin-film structures using ab initio calculations. At the heart of this method is the complexity of the oxide bulk structure, from which a large number of thin films with structural building blocks, that is motifs, from metastable bulk oxide systems can be extracted. These span a coarse but well-defined network of initial configurations for which density functional theory (DFT) calculations predict and implement dramatic atomic relaxations in the corresponding, resulting thin-film candidates. The network of thin-film candidates (for various film thicknesses and stoichiometries) can be ordered according to their variation in ab initio total energy or in ab initio equilibrium Gibbs free energy. Analysis of the relaxed atomic structures for the most favored structures gives insight into the nature of stable and metastable thin-film oxides. We investigate ultrathin alumina nucleated on TiC as a model system to illustrate this method.