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Jisook Hong

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Published work

2 published item(s)

preprint2020arXiv

Enhancement of Giant Rashba Splitting in BiTeI under Asymmetric Interlayer Interaction

We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer recedes from the Bi layer. Our results indicate that the RSS can be sensitively increased by introducing a vacancy on the Te site to make effective Bi-Te distance shorter. It is also found that the difference of Te p orbital character between two spin-split bands increases when the RSS is developed along crystal momentum, which supports asymmetric interlayer interaction in the spin-split bands. Our work suggests that the modification of interlayer interaction is an effective approach in the modeling of the RSS in BiTeI and other layered materials.

preprint2015arXiv

Control of Valley Degeneracy in MoS2 by Layer Thickness and Electric Field and Its Effect on Thermoelectric Properties

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at Γ and K points in the highest energy valence band and the electron valleys at K and Σmin points in the lowest energy conduction band are shifted differently. The hole valley degeneracy is observed in MoS2 monolayer, while that of electron valley is in MoS2 bilayer and monolayer under the external electric field. By tuning the valley degeneracy, the Seebeck coefficient and electrical conductivity can be separately controlled, and the maximum power factor can be obtained in n-type (p-type) MoS2 monolayer with (without) the external electric field. We suggest that the transition metal dichalcogenides are good example to investigate the role of valley degeneracy in the thermoelectric and optical properties with the control of interlayer interaction and external electric field strength.