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Jie Guan

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Published work

14 published item(s)

preprint2020arXiv

Changing the Phosphorus Allotrope from a Square Columnar Structure to a Planar Zigzag Nanoribbon by Increasing the Diameter of Carbon Nanotube Nanoreactors

Elemental phosphorus nanostructures are notorious for a large number of allotropes, which limits their usefulness as semiconductors. To limit this structural diversity, we synthesize selectively quasi-1D phosphorus nanostructures inside carbon nanotubes (CNTs) that act both as stable templates and nanoreactors. Whereas zigzag phosphorus nanoribbons form preferably in CNTs with an inner diameter exceeding 1.4 nm, a previously unknown square columnar structure of phosphorus is observed to form inside narrower nanotubes. Our findings are supported by electron microscopy and Raman spectroscopy observations as well as ab initio density functional theory calculations. Our computational results suggest that square columnar structures form preferably in CNTs with inner diameter around 1.0 nm, whereas black phosphorus nanoribbons form preferably inside CNTs with 4.1 nm inner diameter, with zigzag nanoribbons energetically favored over armchair nanoribbons. Our theoretical predictions agree with the experimental findings.

preprint2016arXiv

Strain-controlled fundamental gap and structure of bulk black phosphorus

We study theoretically the structural and electronic response of layered bulk black phosphorus to in-layer strain. Ab initio density functional theory (DFT) calculations reveal that the strain energy and interlayer spacing display a strong anisotropy with respect to the uniaxial strain direction. To correctly describe the dependence of the fundamental band gap on strain, we used the computationally more involved GW quasiparticle approach that is free of parameters and superior to DFT studies, which are known to underestimate gap energies. We find that the band gap depends sensitively on the in-layer strain and even vanishes at compressive strain values exceeding about 2%, thus suggesting a possible application of black P in strain-controlled infrared devices.

preprint2016arXiv

Two-dimensional phosphorus carbide: Competition between sp2 and sp3 bonding

We propose previously unknown allotropes of phosphorus carbide (PC) in the stable shape of an atomically thin layer. Different stable geometries, which result from the competition between sp2 bonding found in graphitic C and sp3 bonding found in black P, may be mapped onto 2D tiling patterns that simplify categorizing of the structures. Depending on the category, we identify 2D-PC structures that can be metallic, semi-metallic with an anisotropic Dirac cone, or direct-gap semiconductors with their gap tunable by in-layer strain.

preprint2015arXiv

Designing isoelectronic counterparts to layered group V semiconductors

In analogy to III-V compounds, which have significantly broadened the scope of group IV semiconductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semiconductors. Using {\em ab initio} density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like $α$-SiS to be almost equally stable as the blue-phosphorus-like $β$-SiS. Both $α$-SiS and $β$-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds.

preprint2015arXiv

Relative Stability and Local Curvature Analysis in Carbon Nanotori

We introduce a concise formalism to characterize nanometer-sized tori based on carbon nanotubes and to determine their stability by combining {\em ab initio} density functional calculations with a continuum elasticity theory approach that requires only shape information. We find that the high strain energy in nanotori containing only hexagonal rings is significantly reduced in nanotori containing also other polygons. Our approach allows to determine local curvature and link it to local strain energy, which is correlated with local stability and chemical reactivity.

preprint2015arXiv

Simulated scanning tunneling microscopy images of few-layer-phosphorus capped by graphene and hexagonal boron nitride monolayers

Elemental phosphorous is believed to have several stable allotropes that are energetically nearly degenerate, but chemically reactive. To prevent chemical degradation under ambient conditions, these structures may be capped by monolayers of hexagonal boron nitride ({\em h}-BN) or graphene. We perform {\em ab initio} density functional calculations to simulate scanning tunneling microscopy (STM) images of different layered allotropes of phosphorus and study the effect of capping layers on these images. We find that protective monolayers of insulating {\em h}-BN allow to distinguish between the different structural phases of phosphorus underneath, even though the images are filtered through only nitrogen atoms that appear transparent. No such distinction is possible for phosphorus films capped by semimetallic graphene that masks the underlying structure. Our results suggest that the real-space imaging capability of STM is not hindered by selected capping layers that protect phosphorus surfaces.

preprint2015arXiv

Structural Transition in Layered As$_{\sf\textbf{1-x}}$P$_{\sf\textbf{x}}$ Compounds: A Computational Study

As a way to further improve the electronic properties of group V layered semiconductors, we propose to form in-layer 2D heterostructures of black phosphorus and grey arsenic. We use \textit{ab initio} density functional theory to optimize the geometry, determine the electronic structure, and identify the most stable allotropes as a function of composition. Since pure black phosphorus and pure grey arsenic monolayers differ in their equilibrium structure, we predict a structural transition and a change in frontier states, including a change from a direct-gap to an indirect-gap semiconductor, with changing composition.

preprint2015arXiv

The Nature of the Interlayer Interaction in Bulk and Few-Layer Phosphorus

An outstanding challenge of theoretical electronic structure is the description of van der Waals (vdW) interactions in molecules and solids. Renewed interest in resolving this is in part motivated by the technological promise of layered systems including graphite, transition metal dichalcogenides, and more recently, black phosphorus, in which the interlayer interaction is widely believed to be dominated by these types of forces. We report a series of quantum Monte Carlo (QMC) calculations for bulk black phosphorus and related few-layer phosphorene, which elucidate the nature of the forces that bind these systems and provide benchmark data for the energetics of these systems. We find a significant charge redistribution due to the interaction between electrons on adjacent layers. Comparison to density functional theory (DFT) calculations indicate not only wide variability even among different vdW corrected functionals, but the failure of these functionals to capture the trend of reorganization predicted by QMC. The delicate interplay of steric and dispersive forces between layers indicate that few-layer phosphorene presents an unexpected challenge for the development of vdW corrected DFT.

preprint2014arXiv

High stability of faceted nanotubes and fullerenes of multi-phase layered phosphorus: A computational study

We present a paradigm in constructing very stable, faceted nanotube and fullerene structures by laterally joining nanoribbons or patches of different planar phosphorene phases. Our ab initio density functional calculations indicate that these phases may form very stable, non-planar joints. Unlike fullerenes and nanotubes obtained by deforming a single-phase planar monolayer at substantial energy penalty, we find faceted fullerenes and nanotubes to be nearly as stable as the planar single-phase monolayers. The resulting rich variety of polymorphs allows to tune the electronic properties of phosphorene nanotubes (PNTs) and fullerenes not only by the chiral index, but also by the combination of different phosphorene phases. In selected PNTs, a metal-insulator transition may be induced by strain or changing the number of walls.

preprint2014arXiv

Local curvature and stability of two-dimensional systems

We propose a fast method to determine the local curvature in two-dimensional (2D) systems with arbitrary shape. The curvature information, combined with elastic constants obtained for a planar system, provides an accurate estimate of the local stability in the framework of continuum elasticity theory. Relative stabilities of graphitic structures including fullerenes, nanotubes and schwarzites, as well as phosphorene nanotubes, calculated using this approach, agree closely with ab initio density functional calculations. The continuum elasticity approach can be applied to all 2D structures and is particularly attractive in complex systems with known structure, where the quality of parameterized force fields has not been established.

preprint2014arXiv

Phase coexistence and metal-insulator transition in few-layer phosphorene: A computational study

Based on {\em ab initio} density functional calculations, we propose $γ$-P and $δ$-P as two additional stable structural phases of layered phosphorus besides the layered $α$-P (black) and $β$-P (blue) phosphorus allotropes. Monolayers of some of these allotropes have a wide band gap, whereas others, including $γ$-P, show a metal-insulator transition caused by in-layer strain or changing the number of layers. An unforeseen benefit is the possibility to connect different structural phases at no energy cost. This becomes particularly valuable in assembling heterostructures with well-defined metallic and semiconducting regions in one contiguous layer.

preprint2014arXiv

Tiling Phosphorene

We present a scheme to categorize the structure of different layered phosphorene allotropes by mapping their non-planar atomic structure onto a two-color 2D triangular tiling pattern. In the buckled structure of a phosphorene monolayer, we assign atoms in "top" positions to dark tiles and atoms in "bottom" positions to light tiles. Optimum $sp^3$ bonding is maintained throughout the structure when each triangular tile is surrounded by the same number $N$ of like-colored tiles, with $0{\le}N{\le}2$. Our ab initio density functional calculations indicate that both the relative stability and electronic properties depend primarily on the structural index $N$. The proposed mapping approach may also be applied to phosphorene structures with non-hexagonal rings and 2D quasicrystals with no translational symmetry, which we predict to be nearly as stable as the hexagonal network.

preprint2014arXiv

Topologically protected conduction state at carbon foam surfaces:An ab-initio study

We report results of \textit{ab initio} electronic structure and quantum conductance calculations indicating the emergence of conduction at the surface of semiconducting carbon foams. Occurrence of new conduction states is intimately linked to the topology of the surface and not limited to foams of elemental carbon. Our interpretation based on rehybridization theory indicates that conduction in the foam derives from first- and second-neighbor interactions between $p_\|$ orbitals lying in the surface plane, which are related to $p_\perp$ orbitals of graphene. The topologically protected conducting state occurs on bare and hydrogen-terminated foam surfaces and is thus unrelated to dangling bonds. Our results for carbon foam indicate that the conductance behavior may be further significantly modified by surface patterning.

preprint2014arXiv

Unusual Electronic Structure of Few-Layer Grey Arsenic: A Computational Study

We use ab initio density functional theory to study the equilibrium geometry and electronic structure of few-layer grey arsenic. In contrast to the bulk structure that is semimetallic, few-layer grey As displays a significant band gap that depends sensitively on the number of layers, in-layer strain, layer stacking and inter-layer spacing. A metal-semiconductor transition can be introduced by changing the number of layers or the in-layer strain. We interpret this transition by an abrupt change in the spatial distribution of electronic states near the top of the valence band.