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Jiban Kangsabanik

Jiban Kangsabanik appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

Disorder-mediated quenching of magnetization in NbVTiAl: Theory and Experiment

In this paper, we present the structural, electronic, magnetic and transport properties of a equiatomic quaternary alloy NbVTiAl. The absence of (111) and (200) peaks in X-ray diffraction (XRD) data confirms the A2-type structure. Magnetization measurements indicate a high Curie temperature and a negligibly small magnetic moment ($\sim 10^{-3} μ_B/f.u.$) These observations are indicative of fully compensated ferrimagnetism in the alloy. Temperature-dependent resistivity indicates metallic nature. Ab-initio calculation of fully ordered NbVTiAl structure confirms a nearly half metallic behavior with a high spin polarization ($\sim$ 90 \%) and a net magnetic moment of 0.8 $μ_B/f.u.$ (in complete contrast to the experimental observation). One of the main objective of the present paper is to resolve and explain the long-standing discrepancy between theoretical prediction and experimental observation of magnetization for V-based quaternary Heusler alloys, in general. To gain an in-depth understanding, we modelled various disordered states and its subsequent effect on the magnetic and electronic properties. The discrepancy is attributed to the A2 disorder present in the system, as confirmed by our XRD data. The presence of disorder also causes the emergence of finite states at the Fermi level, which impacts the spin polarization of the system.

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preprint2020arXiv

Optoelectronic Properties and Defect Physics of Lead-free Photovoltaic Absorbers Cs$_2$Au$^{I}$Au$^{III}$X$_6$ (X=I, Br)

Stability and toxicity issues with the hybrid lead iodide perovskite MAPbI$_3$ necessitate a hunt for potential alternatives. Here, we shed light on promising photovoltaic properties of gold mixed-valence halide perovskites Cs$_2$Au$_2$X$_6$ (X = I, Br, Cl). They satisfy fundamental requirements such as nontoxicity, better stability, a band gap in the visible range, and a low excitonic binding energy. Our study shows a favorable electronic structure, resulting in a high optical-transition strength, and thus a sharp rise in the absorption spectrum near the band gap. This, in turn, yields a very high short-circuit current density and hence higher simulated efficiency compared with MAPbI$_3$. However, careful investigation of defect physics reveals the possibility of deep-level defects (such as V$_X$ , V$_{Cs}$, X$_{Au}$, X$_{Cs}$, Au$_i$, and Au$_X$ , X = I, Br), depending on the growth conditions. These can act as carrier traps and become detrimental to photovoltaic performance. The present study should help in taking necessary precautions in synthesizing these compounds in a controlled chemical environment, which should minimize performance limiting defects and pave the way for future studies on this class of materials.

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preprint2016arXiv

Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit

Half Heusler (HH) thermoelectric alloys provide a wide platform to choose materials with non-toxic and earth abundant elements. This article presents an ab-initio theoretical evaluation of electrical and thermal transport properties of three Bismuth-based most promising thermoelectric alloys, selected out of 54 stable HH compounds. These are brand new compounds which are recently proposed to be stable (Nature Chem. 7, 308 (2015)) and may have interesting properties. The calculated band structure of the three compounds, namely HfRhBi, ZrIrBi and ZrRhBi, served as a hint for their promising thermoelectric properties. To gain confidence on the theoretical predictions of these unreported systems, we first checked our calculated results for a well studied similar compound, ZrNiSn, and showed reasonable agreement with the measured ones. HfRhBi and ZrIrBi turn out to be narrow band gap while ZrRhBi is a moderate band gap semiconductor. A detailed study of the carrier concentration and temperature dependance of the Seebeck coefficient (S), Power factor (S$^2 σ$), lattice ($κ_L$) and electronic ($κ_e$) thermal conductivity and hence the figure of merit (ZT) is carried out. In contrast to most promising known thermoelectric materials, we found high power factor for these materials (highest S$^2 σ\sim$17.36 mWm$^{-1}$K$^{-2}$ for p-type ZrIrBi). All the three systems (specially p-type) show high figure of merit, with ZT value as high as 0.45 for ideal crystal. Maximum ZT and the corresponding optimal n- and p-type doping concentrations ($n_c$) are calculated for all the three compounds, which shall certainly pave guidance to future experimental work.

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preprint2016arXiv

Crystal structure, stability and optoelectronic properties of the organic-inorganic wide bandgap perovskite CH3NH3BaI3: Candidate for transparent conductor applications

Structural stability, electronic structure and optical properties of CH3NH3BaI3 hybrid perovskite is examined both from theory as well as experiment. Solution-processed thin films of CH3NH3BaI3 exhibited a high band gap of approximately 3.87 eV, which is in excellent agreement with the theoretical estimate of 4 eV. Also, the XRD patterns of the thin films match well with the l-peaks of the simulated pattern obtained from the relaxed unit cell of CH3NH3BaI3, crystallizing in the I4/mcm space group, with lattice parameters, a = 9.30 A, c = 13.94 A. Atom projected density of state and band structure calculations reveal the conduction and valence band edges to be comprised primarily of Barium d-orbitals and Iodine p-orbitals, respectively. The larger band gap of CH3NH3BaI3 compared to CH3NH3PbI3 can be attributed to the lower electro-negativity coupled with the lack of d-orbitals in the valence band of Ba{2+}. A more detailed analysis reveals the excellent chemical and mechanical stability of CH3NH3BaI3 against humidity, unlike its lead halide counterpart, which degrades under such conditions. The dopability of the CH3NH3BaI3 compound e.g. by doping La on the Ba site combined with its structural and mechanical stability under the ambient conditions, suggests this compound as a promising candidate for transparent conductor applications, especially for all perovskite solar cells.

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preprint2016arXiv

La-doped CH3NH3BaI3 : A Promising Transparent Conductor

Hybrid perovskites (CH3NH3PbI3) is one of the most promising novel materials for solar harvesting. Toxicity of lead (Pb), however, has always remained a concern. We investigated the electronic structure of complete replacement of Pb by alkaline earths (Ca, Sr, Ba) and found it to be wide band gapped (Eg) semiconductors (band gap ~ 3.7 to 4.0 eV), and hence not suitable as absorber material. This opens up a new avenue to explore these materials as transparent conductor (TC). We doped CH3NH3BaI3 (largest Eg) with La, which shifts its Fermi level (EF) at conduction band bottom and induces states at EF for conduction. This is precisely what is required for a transparent conductor. Optical and transport properties simulated from linear response (within Density Functional Theory (DFT)) calculations suggested it to be a very good TC material with a high figure of merit (σ/α), where σ is the electrical conductivity and α is the optical absorption coefficient. This claim is also supported by our calculated results on density of states at EF, effective mass, carrier concentration etc. at various La-doping. We propose CH3NH3(Ba1-xLax)I3 (x~12.5%) to be a good TC material to be used in a all perovskite solar cell.

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