Researcher profile

Jianting Dong

Jianting Dong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2026arXiv

Electric field switching of altermagnetic spin-splitting in multiferroic skyrmions

Magnetic skyrmions are localized magnetic structures that retain their shape and stability over time, thanks to their topological nature. Recent theoretical and experimental progress has laid the groundwork for understanding magnetic skyrmions characterized by negligible net magnetization and ultrafast dynamics. Notably, skyrmions emerging in materials with altermagnetism, a novel magnetic phase featuring lifted Kramers degeneracy-have remained unreported until now. In this study, we demonstrate that BiFeO3, a multiferroic renowned for its strong coupling between ferroelectricity and magnetism, can transit from a spin cycloid to a Neel-type skyrmion under antidamping spin-orbit torque at room temperature. Strikingly, the altermagnetic spin splitting within BiFeO3 skyrmion can be reversed through the application of an electric field, revealed via the Circular photogalvanic effect. This quasiparticle, which possesses a neutral topological charge, holds substantial promise for diverse applications-most notably, enabling the development of unconventional computing systems with low power consumption and magnetoelectric controllability.

preprint2022arXiv

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations based on density functional theory, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn3Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four non-volatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other non-collinear AFM metals like Mn3Ge, Mn3Ga, Mn3Pt, and Mn3GaN. Our work provides a robust method for detecting the Néel vector in non-collinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.