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Jianing Zhuang

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cond-mat.mes-hall physics.comp-ph

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preprint2016arXiv

Impurity-limited quantum transport variability in magnetic tunnel junctions

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our first-principles calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.

preprint2011arXiv

Disorder induced quantized conductance with fractional value and universal conductance fluctuation in three-dimensional topological insulators

We report a theoretical investigation on the conductance and its fluctuation of three-dimensional topological insulators (3D TI) in $Bi_2Se_3$ and $Sb_2Te_3$ in the presence of disorders. Extensive numerical simulations are carried out. We find that in the diffusive regime the conductance is quantized with fractional value. Importantly, the conductance fluctuation is also quantized with a universal value. For 3D TI connected by two terminals, three independent conductances $G_{zz}$, $G_{xx}$ and $G_{zx}$ are identified where z is the normal direction of quintuple layer of 3D TI (see inset of Fig.1). The quantized conductance are found to be $<G_{zz}>=1$, $<G_{xx}>=4/3$ and $<G_{zx}>=6/5$ with corresponding quantized conductance fluctuation 0.54, 0.47, and 0.50. The quantization of average conductance and its fluctuation can be understood by theory of mode mixing. The experimental realization that can observe the quantization of average conductance is discussed.