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Jiangtao Wu

Jiangtao Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

3 published item(s)

preprint2022arXiv

Regulate the direct-indirect electronic band gap transition by electron-phonon interaction in BaSnO3

The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-doping Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-doping played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.

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preprint2013arXiv

Mechanics and Tunable Bandgap by Straining in Single-Layer Hexagonal Boron-Nitride

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be realized in graphene.The electrically insulating h-BN and semi-metal graphene may open good opportunities to realize a semiconductor by manipulating the morphology and composition of such heterogeneous structures.Here we report the mechanical properties of h-BN and its band structures tuned by mechanical straining by using the density functional theory calculations.The elastic properties, both the Young's modulus and bending rigidity for h-BN, are isotropic.We reveal that there is a bi-linear dependence of band gap on the applied tensile strains in h-BN. Mechanical strain can tune single-layer h-BN from an insulator to a semiconductor, with a band gap in the 4.7eV to 1.5eV range.

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preprint2013arXiv

Tunable Band Structures of Polycrystalline Graphene by External and Mismatch Strains

Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations. We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain. However, some particular asymmetrical GBs can open a band gap in graphene and their band structures can be substantially tuned by external strains. A maximum band gap about 0.19 eV was observed in matched-armchair GB (5, 5) | (3, 7) with a misorientation of θ=13o when the applied uniaxial strain increases to 9%. Although mismatch strain is inevitable in asymmetrical GBs, it has a small influence on the band gap of polycrystalline graphene.

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