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Jian-Hao Chen

Jian-Hao Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Evidence of tunable magnetic coupling in hydrogenated graphene

A lot of efforts have been devoted to understanding the origin and effects of magnetic moments induced in graphene with carbon atom vacancy, or light adatoms like hydrogen or fluorine. At the meantime, the large negative magnetoresistance (MR) widely observed in these systems is not well understood, nor had it been associated with the presence of magnetic moments. In this paper, we study the systematic evolution of the large negative MR of in-situ hydrogenated graphene in ultra-high vacuum (UHV) environment. We find for most combination of electron density ($n_e$) and hydrogen density ($n_H$), MR at different temperature can be scaled to $α=(μ_BB)/[k_B(T-T^*)]$, where $T^*$ is the Curie-Weiss temperature. The sign of $T^*$ indicates the existence of tunable ferromagnetic-like ($T^* >0$) and anti-ferromagnetic-like ($T^* <0$) coupling in hydrogenated graphene. However, the lack of hysteresis of MR or anomalous Hall effect below $|T^*|$ points to the fact that long-range magnetic order did not emerge, which we attribute to the competition of different magnetic orders and disordered arrangement of magnetic moments on graphene. We also find that localized impurity states introduced by H adatoms could modify the capacitance of hydrogenated graphene. This work provides a new way to extract information from large negative MR behavior and can be a key to help understanding interactions of magnetic moments in graphene.

preprint2009arXiv

Charged impurity scattering in bilayer graphene

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.