Researcher profile

Jiale He

Jiale He contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Xiaomi EV World Model: A Joint World Model Integrating Reconstruction and Generation for Autonomous Driving

This report presents a unified technical system addressing the two core capabilities of world models for autonomous driving: world representation and world generation. For world representation, we propose WorldRec, a feed-forward reconstruction architecture driven by sparse scene queries. WorldRec initializes structured queries in 3D space, leveraging them to aggregate cross-view, cross-temporal features, thereby naturally enforcing spatial consistency across frames and yielding compact yet high-fidelity 3D Gaussian scene representations. For world generation, we propose WorldGen, a two-stage training framework of bidirectional pretraining followed by causal fine-tuning through three progressive stages (Teacher Forcing, ODE distillation, and DMD), enabling high-quality online causal video generation in as few as 4 denoising steps. Building on both modules, we further introduce the JWM, which deeply integrates WorldRec and WorldGen to achieve synergistic gains in generation stability, cross-frame consistency, and visual fidelity, providing a solid foundation for closed-loop simulation, data synthesis, and end-to-end training in autonomous driving.

preprint2020arXiv

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of 'all-2D' vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.