Source author record

Jesper Toft Falkenberg

Jesper Toft Falkenberg appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall physics.comp-ph

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

All-graphene edge contacts: Electrical resistance of graphene T-junctions

Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We examine the energetics of various junction structures as a function of the atomic scale geometry. Three-terminal equilibrium Green's functions are used to determine the transmission spectrum and contact resistance of the system. We find that the most symmetric structures have a significant binding energy, and we determine the contact resistances in the junction to be in the range of 1-10 kOhm which is comparable to the best contact resistance reported for edge-contacted graphene-metal contacts. We conclude that conducting all-carbon T-junctions should be feasible.

preprint2016arXiv

Localized electronic states at grain boundaries on the surface of graphene and graphite

Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance.

preprint2015arXiv

Simple and efficient way of speeding up transmission calculations with $k$-point sampling

The transmissions as functions of energy are central for electron or phonon transport in the Landauer transport picture. We suggest a simple and computationally "cheap" post-processing scheme to interpolate transmission functions over $k$-points to get smooth well-converged average transmission functions. This is relevant for data obtained using typical "expensive" first principles calculations where the leads/electrodes are described by periodic boundary conditions. We show examples of transport in graphene structures where a speed-up of an order of magnitude is easily obtained.