Researcher profile

Jesi R. Maguire

Jesi R. Maguire contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Imaging Ferroelectrics: Charge Gradient Microscopy (CGM) versus Potential Gradient Microscopy (PGM)

In 2014, Charge Gradient Microscopy (CGM) was first reported as a new scanning probe imaging mode, particularly well-suited for the characterisation of ferroelectrics. The implementation of the technique is straightforward; it involves monitoring currents that spontaneously develop between a passive conducting atomic force microscopy tip and Earth, as the tip is scanned across the specimen surface. However, details on the fundamental origin of contrast and what images mean, in terms of associated ferroelectric microstructures, are not yet fully understood. Here, by comparing information from CGM and Kelvin Probe Force Microscopy (KPFM), obtained from the same sets of ferroelectric domains (in both lithium niobate and barium titanate), we show that CGM reasonably reflects the spatial derivative of the measured surface potential. This is conceptually different from measuring local gradients in the surface bound-charge density or in any associated screening charges: after all, we see clear CGM signals, even when polarisation is entirely in-plane. We therefore suggest that CGM in ferroelectrics might be more accurately called Potential Gradient Microscopy (PGM). Intriguingly, in all cases examined, the measured surface potential (determined both through KPFM and by integrating the CGM signal) is of the opposite sign to that intuitively expected for a completely clean ferroelectric in vacuum. This is commonly observed and presumed due to a charge accumulation on the ferroelectric surface which is not easily removed.

preprint2022arXiv

Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180o charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, the conductivity difference between domains and domain walls is extremely and unusually large (a factor of at least 1013) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channelled along the walls; secondly, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes (perpendicular to the thin film surface), then the test geometry mirrors that of a Corbino disc, which is a textbook arrangement for geometric magnetoresistance measurement. Our data imply carriers at the domain walls with extremely high room temperature Hall mobilities of up to ~ 3,700cm2V-1s-1. This is an unparalleled value for oxide interfaces (and for bulk oxides too) and is most comparable to mobilities in other systems typically seen at cryogenic, rather than at room, temperature.